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公开(公告)号：US20150105032A1
公开(公告)日：2015-04-16
申请号：US14054634
申请日：2013-10-15
Applicant: QUALCOMM Incorporated
Inventor： Xinwei WANG , James F. IMBORNONE , Xiangdong ZHANG
CPC classification number: H03K17/161 , H03K17/063 , H03K17/102 , H03K17/162 , H04B1/40
Abstract: Exemplary embodiments are related to a dynamic gate bias for an electronic switch. A device may include a radio-frequency (RF) switch configured to receive an RF signal. The device may further include a bias generator configured to convey a bias signal based on a power level of the RF signal to the RF switch.
Abstract translation: 示例性实施例涉及电子开关的动态门偏置。 设备可以包括被配置为接收RF信号的射频（RF）开关。 该装置还可以包括偏置发生器，其被配置为基于RF信号的功率电平将输入偏置信号传送到RF开关。
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Patent Agency Ranking
公开(公告)号：US20190020317A1
公开(公告)日：2019-01-17
申请号：US16031834
申请日：2018-07-10
Applicant: QUALCOMM Incorporated
Inventor： Jing-Hwa CHEN , Jisun RYU , Yan Kit Gary HAU , Yanjie SUN , Xinwei WANG , Xiangdong ZHANG
Abstract: Certain aspects of the present disclosure provide methods and apparatus for current-limiting protection of an amplifier, such as a power amplifier in a radio frequency (RF) front-end. One example current-limiting circuit generally includes a node coupled to a current source, a plurality of current-sinking devices coupled to the node, one or more switches coupled between the node and at least one of the plurality of current-sinking devices, and a bias circuit having an input coupled to the node and an output for coupling to an input of the amplifier.
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公开(公告)号：US20230034531A1
公开(公告)日：2023-02-02
申请号：US17390166
申请日：2021-07-30
Applicant: QUALCOMM Incorporated
Inventor： Zhenying LUO , Yazhou WANG , Xinwei WANG , Jing-Hwa CHEN , Xiangdong ZHANG
Abstract: Methods and apparatus for limiting the input voltage (swing) of a power amplifier, such as a power amplifier in a radio frequency (RF) front-end of a wireless device. One example radio frequency front-end circuit generally includes a power amplifier, a matching circuit having an output coupled to an input of the power amplifier, and an overvoltage protection circuit coupled to the matching circuit. With an overvoltage protection circuit coupled to the matching circuit in this manner, the power amplifier may have enhanced ruggedness performance.
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公开(公告)号：US20210273615A1
公开(公告)日：2021-09-02
申请号：US16804929
申请日：2020-02-28
Applicant: QUALCOMM Incorporated
Inventor： Jing-Hwa CHEN , Junzhi YU , Yan Kit Gary HAU , Guoqing FU , Xinwei WANG , Xiangdong ZHANG
Abstract: Certain aspects of the present disclosure are directed to an amplifier. The amplifier may include a transistor coupled to an output of the amplifier, and a resonator coupled between the output of the amplifier and a reference potential node, a resonant frequency of the resonator being set to be at a subharmonic of a fundamental frequency of the amplifier, and an impedance of the resonator being greater than a load impedance of the amplifier at the fundamental frequency of the amplifier.
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公开(公告)号：US20200099342A1
公开(公告)日：2020-03-26
申请号：US16137082
申请日：2018-09-20
Applicant: QUALCOMM INCORPORATED
Inventor： Yan Kit Gary HAU , Jisun RYU , Zhenying LUO , Xinwei WANG , Xiangdong ZHANG
Abstract: An amplifier circuit includes a driver amplifier implemented on a silicon-on-insulator (SOI) substrate and configured to amplify a radio frequency (RF) signal, a bypass circuit implemented on the SOI substrate and configured to selectively bypass the driver amplifier, an output coupled to the driver amplifier and the bypass circuit, an interconnect configured to couple the output to a gallium arsenide (GaAs) substrate, and a power amplifier implemented on the GaAs substrate and configured to amplify a signal received over the interconnect from the output.
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6.发明申请公开(公告)号：US20190089314A1
公开(公告)日：2019-03-21
申请号：US15706242
申请日：2017-09-15
Applicant: QUALCOMM Incorporated
Inventor： Yanjie SUN , Jing-Hwa CHEN , Zhenying LUO , Yan Kit Gary HAU , Jisun RYU , Ashwin DUGGAL , Kihun CHANG , ZhenQi CHEN , Xinwei WANG , Xiangdong ZHANG
CPC classification number: H03F1/52 , H03F1/0205 , H03F1/565 , H03F3/195 , H03F3/245 , H03F2200/171 , H03F2200/225 , H03F2200/318 , H03F2200/387 , H03F2200/391 , H03F2200/411 , H03F2200/426 , H03F2200/451 , H04B1/04 , H04B1/48 , H04B1/52 , H04B2001/0408
Abstract: Certain aspects of the present disclosure provide methods and apparatus for operating a power amplifier. In one example, the apparatus includes a power amplifier configured to amplify an input signal having a frequency to produce a radio frequency (RF) output signal at an output and a harmonic tuning circuit coupled between a power supply and the power amplifier output, the harmonic tuning circuit configured to reduce a current or voltage provided to the power amplifier via a resonance at one or more harmonics of the frequency of the input signal.
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