公开(公告)号：US20150137201A1

公开(公告)日：2015-05-21

申请号：US14264620

申请日：2014-04-29

Applicant: QUALCOMM Incorporated

Inventor： Bruce Sokki LEE ,  Seyfollah Seyfollahi BAZARJANI ,  Liang DAI

IPC: H01L27/06 ,  H01L49/02

CPC classification number: H01L27/0629 ,  H01L23/5223 ,  H01L27/0733 ,  H01L28/60 ,  H01L28/86 ,  H01L28/92 ,  H01L29/66795 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A methods for fabricating a capacitor structure includes fabricating polysilicon structures on a semiconductor substrate. The method further includes fabricating M1 to diffusion (MD) interconnects on the semiconductor substrate. The polysilicon structures are disposed in an interleaved arrangement with the MD interconnects. The method also includes selectively connecting the interleaved arrangement of the MD interconnects and/or the polysilicon structures as the capacitor structure.

Abstract translation: 制造电容器结构的方法包括在半导体衬底上制造多晶硅结构。 该方法还包括在半导体衬底上制造M1到扩散（MD）互连。 多晶硅结构以与MD互连的交错布置设置。 该方法还包括有选择地连接MD互连和/或多晶硅结构的交错布置作为电容器结构。