公开(公告)号：US20230005546A1

公开(公告)日：2023-01-05

申请号：US17367248

申请日：2021-07-02

Applicant: QUALCOMM Incorporated

Inventor： Xiao CHEN ,  Chen-ju HSIEH ,  Sung SON ,  Chulmin JUNG

IPC: G11C16/10 ,  G11C16/26 ,  G11C16/24 ,  G11C16/08 ,  G11C16/04 ,  G11C17/12

Abstract: A drain programmed read-only memory includes a diffusion region that spans a width of a bitcell and forms a drain of a first transistor and a second transistor. A bit line lead in a metal layer adjacent the diffusion region extends across the width of the bitcell. A first via extends from an upper half of the bit line lead and couples to a drain of the first transistor. Similarly, a second via extends from a lower half of the bit line and couples to a drain of the second transistor.