公开(公告)号：US20240257868A1

公开(公告)日：2024-08-01

申请号：US18104167

申请日：2023-01-31

Applicant: QUALCOMM Incorporated

Inventor： Chulmin JUNG ,  David LI ,  Po-Hung CHEN ,  Ayan PAUL ,  Derek YANG ,  Chun-Yen LIN

IPC: G11C11/419

CPC classification number: G11C11/419

Abstract: A memory is provided with a pseudo-differential sense amplifier for single-endedly sensing a first read bit line from a first bank of bitcells. The sense amplifier compares a voltage of the first read bit line to a voltage of a pre-charged second read bit line from a second bank of bitcells to make a bit decision for a read operation through the first read bit line to the first bank of bitcells.