公开(公告)号：US20190157160A1

公开(公告)日：2019-05-23

申请号：US15817452

申请日：2017-11-20

Applicant: QUALCOMM Incorporated

Inventor： Cimang LU ,  Stanley Seungchul SONG ,  Periannan CHIDAMBARAM

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L21/308

Abstract: Aspects of the disclosure are directed to a semiconductor device. The semiconductor device may include a plurality of fins formed on a semiconductor substrate including a bulk semiconductor material, a plurality of shallow trench isolation (STI) trenches formed between the plurality of fins, a hardmask formed around the plurality of fins, and a plurality of fin bottom portions formed below the plurality of fins.