公开(公告)号：US20150303921A1

公开(公告)日：2015-10-22

申请号：US14257212

申请日：2014-04-21

Applicant: QUALCOMM Incorporated

Inventor： Changho Jung ,  Frank Guo ,  Rakesh Vattikonda

IPC: H03K19/0185

CPC classification number: H03K19/018521 ,  H03K3/356182

Abstract: A level-shifter is provided with PMOS stacks that are selectively weakened or strengthened depending upon the binary state of an input signal.

Abstract translation: 电平移位器具有根据输入信号的二进制状态选择性地削弱或加强的PMOS堆叠。

公开(公告)号：US09432022B2

公开(公告)日：2016-08-30

申请号：US14257212

申请日：2014-04-21

Applicant: QUALCOMM Incorporated

Inventor： Changho Jung ,  Frank Guo ,  Rakesh Vattikonda

IPC: H03L5/00 ,  H03K19/0185 ,  H03K3/356

CPC classification number: H03K19/018521 ,  H03K3/356182

Abstract: A level-shifter is provided with PMOS stacks that are selectively weakened or strengthened depending upon the binary state of an input signal.

Abstract translation: 电平移位器具有根据输入信号的二进制状态选择性地削弱或加强的PMOS堆叠。