公开(公告)号：US20210351192A1

公开(公告)日：2021-11-11

申请号：US16869829

申请日：2020-05-08

Applicant: QUALCOMM Incorporated

Inventor： Mishel MATLOUBIAN ,  Taehun KWON ,  Gang LIN

IPC: H01L27/112 ,  H01L29/78 ,  G11C17/16

Abstract: Certain aspects of the present disclosure generally relate to a one-time programmable (OTP) device including an antifuse device. The antifuse device generally includes a first active region, a second active region, a channel region disposed between the first active region and the second active region, a gate region disposed above the channel region, and a first set of lightly doped drain (LDD) extension regions extending partially across the channel region from the first active region and the second active region and extending into a portion of the channel region underneath the gate region. The first set of LDD extension regions have a same dopant type as the gate region and at least one of the first active region or the second active region.

公开(公告)号：US20200211958A1

公开(公告)日：2020-07-02

申请号：US16232596

申请日：2018-12-26

Applicant: QUALCOMM Incorporated

Inventor： Kai LIU ,  Gang LIN

IPC: H01L23/522 ,  H01L49/02 ,  H01L23/00 ,  H01L23/552

Abstract: A power supply package is disclosed, including a power management integrated circuit (PMIC) die with a plurality of switching circuits, and a plurality of integrated 3-dimensional (3D) inductors disposed around the PMIC die. Each 3D inductor corresponds to a switching circuit and is electrically coupled to first and second connections for the corresponding switching circuit. An integrated electromagnetic interference (EMI) shield is disposed between the PMIC and the 3D inductors.