SELECTIVE REFRESH MECHANISM FOR DRAM
    3.
    发明申请

    公开(公告)号:US20190013062A1

    公开(公告)日:2019-01-10

    申请号:US15644737

    申请日:2017-07-07

    Abstract: Systems and methods for selective refresh of a cache, such as a last-level cache implemented as an embedded DRAM (eDRAM). A refresh bit and a reuse bit are associated with each way of at least one set of the cache. A least recently used (LRU) stack tracks positions of the ways, with positions towards a most recently used position of a threshold comprising more recently used positions and positions towards a least recently used position of the threshold comprise less recently used positions. A line in a way is selectively refreshed if the position of the way is one of the more recently used positions and if the refresh bit associated with the way is set, or the position of the way is one of the less recently used positions and if the refresh bit and the reuse bit associated with the way are both set.

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