公开(公告)号：US20190115091A1

公开(公告)日：2019-04-18

申请号：US15964050

申请日：2018-04-26

Applicant: QUALCOMM Incorporated

Inventor： Greg Seok ,  Fahad Ahmed ,  Chulmin Jung

IPC: G11C29/44 ,  G11C29/10 ,  G11C29/18 ,  G11C29/16

Abstract: A method and apparatus for memory built-in self-test (MBIST) may be configured to load a testing program from an MBIST controller, execute the testing program, and determine and write pass/fail results to a read-out register. For example, in various embodiments, the testing program may comprise one or more write operations that are configured to change data stored in a plurality of memory bitcells from a first value to a second value while a byte enable signal is asserted in order to test stability associated with a memory bitcell, create DC and AC noise due to byte enable mode stress, check at-speed byte enable mode timing, and execute a self-checking algorithm that may be designed to verify whether data is received at a data input (Din) pin. Any memory bitcells storing a value different from an expected value after performing the write operation(s) may be identified as having failed the MBIST.

公开(公告)号：US10748641B2

公开(公告)日：2020-08-18

申请号：US15964050

申请日：2018-04-26

Applicant: QUALCOMM Incorporated

Inventor： Greg Seok ,  Fahad Ahmed ,  Chulmin Jung

IPC: G11C29/44 ,  G11C29/10 ,  G11C29/18 ,  G11C29/16 ,  G11C29/50 ,  G11C29/26 ,  G11C29/04 ,  G11C29/38

Abstract: A method and apparatus for memory built-in self-test (MBIST) may be configured to load a testing program from an MBIST controller, execute the testing program, and determine and write pass/fail results to a read-out register. For example, in various embodiments, the testing program may comprise one or more write operations that are configured to change data stored in a plurality of memory bitcells from a first value to a second value while a byte enable signal is asserted in order to test stability associated with a memory bitcell, create DC and AC noise due to byte enable mode stress, check at-speed byte enable mode timing, and execute a self-checking algorithm that may be designed to verify whether data is received at a data input (Din) pin. Any memory bitcells storing a value different from an expected value after performing the write operation(s) may be identified as having failed the MBIST.