FINE PITCH AND SPACING INTERCONNECTS WITH RESERVE INTERCONNECT PORTION

    公开(公告)号:US20190067178A1

    公开(公告)日:2019-02-28

    申请号:US15690541

    申请日:2017-08-30

    Abstract: Some features pertain to a substrate that includes a first dielectric, a first interconnect, and a second interconnect. The first interconnect is at least partially embedded in the first dielectric layer. The first interconnect includes a first portion and a second portion. The first portion is configured to increase reliability as compared to a substrate having only a second portion of a first interconnect. The increase in reliability due at least in part to the first portion providing additional interconnect material to mitigate interconnect material lost through electromigration. A part of the second portion (of the first interconnect) is free of the first dielectric and may be configured to be coupled to another device.

    Low profile integrated package
    2.
    发明授权

    公开(公告)号:US10651160B2

    公开(公告)日:2020-05-12

    申请号:US15867518

    申请日:2018-01-10

    Abstract: A package that includes a substrate comprising an interposer interconnect and a cavity, a redistribution portion coupled to the substrate, the redistribution comprising a plurality of redistribution interconnects, and a first die coupled to the redistribution portion through the cavity of the substrate. A substantial region between a side surface of the first die and the substrate is free of an encapsulation layer. In some implementations, the substrate is free of a metal ring that surrounds the first die. In some implementations, the redistribution portion comprises a barrier layer and a first interconnect coupled to the barrier layer. The barrier layer is coupled to the interposer interconnect.

    High density embedded interconnects in substrate

    公开(公告)号:US10804195B2

    公开(公告)日:2020-10-13

    申请号:US16230896

    申请日:2018-12-21

    Abstract: A device that includes a die and a substrate coupled to the die. The substrate includes a dielectric layer and a plurality of embedded interconnects. Each embedded interconnect located through a first planar surface of the substrate such that a first portion of the embedded interconnect is located within the dielectric layer and a second portion of the embedded interconnect is external of the dielectric layer. In some implementations, the substrate includes a core layer. In some implementations, the dielectric layer and the plurality of embedded interconnects may be part of a build up layer of the substrate.

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