公开(公告)号：US10199114B2

公开(公告)日：2019-02-05

申请号：US15607422

申请日：2017-05-26

Applicant: QUALCOMM Incorporated

Inventor： I-Heng Huang ,  Benish Babu ,  Steven Haehnichen ,  Robert Coleman

IPC: G11C16/04 ,  G11C16/34 ,  G11C11/56 ,  G11C16/28 ,  G06F3/06

Abstract: A flash memory device includes an array of non-volatile memory (NVM) cells, at least one detection NVM cell, and a sensing circuit. The array of NVM cells are configured to store data. The sensing circuit is coupled to the at least one detection NVM cell and is configured to measure a charge on the at least one detection NVM cell. The sensing circuit is also configured to compare the measured charge with a threshold charge level and to trigger a refresh of the array of NVM cells in response to the measured charge being less than the threshold charge level.