公开(公告)号：US20210287976A1

公开(公告)日：2021-09-16

申请号：US16819732

申请日：2020-03-16

Applicant: QUALCOMM Incorporated

Inventor： Joan Rey Villarba BUOT ,  Kuiwon KANG ,  Joonsuk PARK ,  Karthikeyan DHANDAPANI

IPC: H01L23/498 ,  H01L21/48

Abstract: Certain aspects of the present disclosure generally relate to an embedded trace substrate having at least two different dielectric layers with different dielectric materials and methods for fabricating the same. One example embedded trace substrate generally includes a first metal layer; a first dielectric layer disposed below the first metal layer and comprising a first dielectric material; a second dielectric layer disposed below the first dielectric layer and comprising a second dielectric material, wherein the second dielectric material of the second dielectric layer is stiffer than the first dielectric material of the first dielectric layer; and a second metal layer disposed below the second dielectric layer.