公开(公告)号：US10930730B2

公开(公告)日：2021-02-23

申请号：US15816295

申请日：2017-11-17

Applicant: QUALCOMM Incorporated

Inventor： Ye Lu ,  Yun Yue ,  Phanikumar Konkapaka ,  Bin Yang ,  Chuan-Hsing Chen

IPC: H01L23/52 ,  H01L27/08 ,  H01L29/06 ,  H01L23/522 ,  H01L29/78 ,  H01L29/93

Abstract: A metal-oxide-semiconductor (MOS) device for radio frequency (RF) applications may include a guard ring. The guard ring may surround the MOS device and at least one other MOS device. The MOS device may further include a level zero contact layer coupled to a first interconnect layer through level zero interconnects and vias. The first interconnect layer may be for routing to the MOS device.

公开(公告)号：US10608123B2

公开(公告)日：2020-03-31

申请号：US15709362

申请日：2017-09-19

Applicant: QUALCOMM Incorporated

Inventor： Phanikumar Konkapaka

IPC: H01L29/93 ,  H03B5/12 ,  H01L29/49 ,  H01L27/06 ,  H04B1/40

Abstract: An integrated circuit formed with a process that enables multiple types of gate stacks improves a quality factor of metal oxide semiconductor (MOS) varactors at the device level. In one instance, the integrated circuit includes multiple first type transistors having a first gate stack with a first resistance and multiple second type transistors having a second gate stack with a second resistance that is higher than the first resistance. The integrated circuit also includes a metal oxide semiconductor varactor having the first gate stack with the first resistance.