Mechanism to enhance endurance in universal flash storage devices

    公开(公告)号:US12265711B1

    公开(公告)日:2025-04-01

    申请号:US18412776

    申请日:2024-01-15

    Abstract: Methods that may be performed by a universal flash storage (UFS) device of a computing device for configuring flash memory cells. Various embodiments may include setting a number of degraded triple-level cells (TLCs) attribute, and configuring at least one degraded TLC as at least one single-level cell (SLC) based on the number of degraded TLCs attribute, the at least one degraded TLC being not functional as a TLC and functional as an SLC. Some embodiments may include identifying the at least one degraded TLC based on at least one degradation attribute associated with the at least one degraded TLC, the at least one degradation attribute configured to indicate that the at least one degraded TLC is not functional as a TLC, and identifying an amount of degraded TLCs that are not functional as a TLC.

    System and method for updating memory tables

    公开(公告)号:US12271303B2

    公开(公告)日:2025-04-08

    申请号:US18349206

    申请日:2023-07-10

    Abstract: Methods that may be performed by a host controller and a memory controller of a computing device. The method synchronizes memory tables between the storage device and a host device by modifying an indicator in a first memory table on the storage device in response to a change in a memory mapping, the first memory table mapping logical addresses to physical addresses of memory on the storage device, the indicator identifying one or more address mapping changes of the first memory table, notifying the host device that the first memory table has been modified, and transmitting to the host device at least a portion of the first memory table including the one or more address mapping changes. The storage device processes memory requests from the host device based on one or more addresses affected by the one or more address mapping changes.

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