公开(公告)号：US09484110B2

公开(公告)日：2016-11-01

申请号：US13953511

申请日：2013-07-29

Applicant: QUALCOMM Incorporated

Inventor： Sei Seung Yoon ,  Chulmin Jung ,  Esin Terzioglu ,  Steven Mark Millendorf

IPC: G11C17/12 ,  G11C7/24

CPC classification number: G11C17/12 ,  G11C7/24

Abstract: A mask-programmed read-only memory (MROM) has a plurality of column line pairs, each having a bit line and a complement bit line. The MROM includes a plurality of memory cells corresponding to a plurality of intersections between the column line pairs and a plurality of word lines. Each memory cell includes a high Vt transistor and a low Vt transistor.

Abstract translation: 掩模编程的只读存储器（MROM）具有多个列线对，每一列具有位线和补码位线。 MROM包括与列线对和多个字线之间的多个交点相对应的多个存储单元。 每个存储单元包括高Vt晶体管和低Vt晶体管。