公开(公告)号：US20150029778A1

公开(公告)日：2015-01-29

申请号：US13953511

申请日：2013-07-29

Applicant: QUALCOMM Incorporated

Inventor： Sei Seung Yoon ,  Chulmin Jung ,  Esin Terzioglu ,  Steven Millendorf

IPC: G11C17/12

CPC classification number: G11C17/12 ,  G11C7/24

Abstract: A mask-programmed read-only memory (MROM) has a plurality of column line pairs, each having a bit line and a complement bit line. The MROM includes a plurality of memory cells corresponding to a plurality of intersections between the column line pairs and a plurality of word liens. Each memory cell includes a high Vt transistor and a low Vt transistor.

Abstract translation: 掩模编程的只读存储器（MROM）具有多个列线对，每一列具有位线和补码位线。 MROM包括与列线对和多个字留置权之间的多个交点相对应的多个存储单元。 每个存储单元包括高Vt晶体管和低Vt晶体管。