公开(公告)号：US20150294697A1

公开(公告)日：2015-10-15

申请号：US14251315

申请日：2014-04-11

Applicant: QUALCOMM Incorporated

Inventor： Chulmin Jung ,  Rui Li ,  David Li ,  Tahseen Shakir ,  Sei Seung Yoon

IPC: G11C7/06 ,  G11C11/419

CPC classification number: G11C7/065 ,  G11C11/419

Abstract: A sense amplifier is provided that includes a skewed latch that latches a voltage difference developed responsive to a read operation on an accessed memory cell. The skewed latch includes a loaded logic gate that is cross-coupled with an unloaded logic gate. The loaded logic gate drives the unloaded logic gate and an output transistor whereas the unloaded logic gate drives only the loaded logic gate.

Abstract translation: 提供了一种读出放大器，其包括倾斜的锁存器，其锁存响应于对所访问的存储器单元的读取操作产生的电压差。 偏斜锁存器包括与卸载逻辑门交叉耦合的加载逻辑门。 加载的逻辑门驱动无载逻辑门和输出晶体管，而无负载逻辑门仅驱动加载的逻辑门。