公开(公告)号：US20170093362A1

公开(公告)日：2017-03-30

申请号：US14866111

申请日：2015-09-25

Applicant: QUALCOMM Incorporated

Inventor： Zhang Jin ,  Tao Yang ,  Tsai-Pi Hung ,  Mohammad Farazian

IPC: H03H7/00 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L23/5223 ,  H01L23/5227 ,  H01L23/5286 ,  H03H7/004

Abstract: Metal-oxide-metal (MOM) type capacitors include a first terminal configured to receive a first voltage, the first terminal being formed on a first dielectric layer; a first set of fingers formed on the first dielectric layer, the first set of fingers being coupled to the first terminal via a conductive trace formed on a second dielectric layer; a second terminal configured to receive second voltage, the second terminal being formed on the first dielectric layer; and a second set of fingers formed on the first dielectric layer, the second set of fingers being coupled to the second terminal, wherein the fingers of the second set are interspersed with the fingers of the first set.

公开(公告)号：US10026685B2

公开(公告)日：2018-07-17

申请号：US14866111

申请日：2015-09-25

Applicant: QUALCOMM Incorporated

Inventor： Zhang Jin ,  Tao Yang ,  Tsai-Pi Hung ,  Mohammad Farazian

IPC: H01L23/522 ,  H03H7/00 ,  H01L23/528

Abstract: Metal-oxide-metal (MOM) type capacitors include a first terminal configured to receive a first voltage, the first terminal being formed on a first dielectric layer; a first set of fingers formed on the first dielectric layer, the first set of fingers being coupled to the first terminal via a conductive trace formed on a second dielectric layer; a second terminal configured to receive second voltage, the second terminal being formed on the first dielectric layer; and a second set of fingers formed on the first dielectric layer, the second set of fingers being coupled to the second terminal, wherein the fingers of the second set are interspersed with the fingers of the first set.