公开(公告)号：US20150380325A1

公开(公告)日：2015-12-31

申请号：US14315324

申请日：2014-06-25

Applicant: QUALCOMM Incorporated

Inventor： Ulrike KINDEREIT ,  Lavakumar RANGANATHAN

IPC: H01L21/66 ,  G01R1/07 ,  H01L27/092

CPC classification number: G01R1/07 ,  G01R31/2884 ,  G01R31/311 ,  H01L22/12 ,  H01L22/24 ,  H01L22/30 ,  H01L27/092

Abstract: An integrated circuit device includes an active silicon layer, and at least one passive metal layer placed in an input region and an output region of the device. The at least one passive metal layer has a surface area and thickness for at least one of the input region or the output region to provide a phase shift of an optical laser, the phase shift corresponding to an optimized visibility of the optical laser during an optic failure analysis of the device.

Abstract translation: 集成电路器件包括有源硅层和放置在器件的输入区域和输出区域中的至少一个无源金属层。 所述至少一个无源金属层具有用于输入区域或输出区域中的至少一个的表面积和厚度以提供光学激光器的相移，所述相移对应于在光学器件期间光学激光器的最佳可见度 设备故障分析