公开(公告)号：US20190371890A1

公开(公告)日：2019-12-05

申请号：US15993679

申请日：2018-05-31

Applicant: QUALCOMM Incorporated

Inventor： Sinan GOKTEPELI ,  George Pete IMTHURN ,  Yun Han CHU ,  Qingqing LIANG

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/45 ,  H01L21/84 ,  H01L21/74 ,  H01L21/285

Abstract: In certain aspects, an apparatus comprises an SOI MOSFET having a diffusion region as a source or a drain on a back insulating layer, wherein the diffusion region has a front diffusion side and a back diffusion side opposite to the front diffusion side; a silicide layer on the front diffusion side having a back silicide side facing the diffusion region and a front silicide side opposite to the back silicide side; and a backside contact connected to the silicide layer, wherein at least a portion of the backside contact is in the back insulating layer.

公开(公告)号：US20230282716A1

公开(公告)日：2023-09-07

申请号：US17653481

申请日：2022-03-04

Applicant: QUALCOMM Incorporated

Inventor： Qingqing LIANG ,  George Pete IMTHURN ,  Yun Han CHU ,  Sivakumar KUMARASAMY

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/41775 ,  H01L29/401 ,  H01L29/4175 ,  H01L29/42376 ,  H01L29/66621 ,  H01L29/7841

Abstract: Disclosed is a transistor of a device that has double side contacts in which at least a drain contact is on the opposite side of the gate. In this way, gate resistance can be reduced without increasing parasitic capacitances between gate and drain.

公开(公告)号：US20200091294A1

公开(公告)日：2020-03-19

申请号：US16690454

申请日：2019-11-21

Applicant: QUALCOMM Incorporated

Inventor： Sinan GOKTEPELI ,  George Pete IMTHURN ,  Yun Han CHU ,  Qingqing LIANG

IPC: H01L29/10 ,  H01L29/45 ,  H01L27/12 ,  H01L21/84 ,  H01L21/74 ,  H01L21/285

Abstract: In certain aspects, an apparatus comprises an SOI MOSFET having a diffusion region as a source or a drain on a back insulating layer, wherein the diffusion region has a front diffusion side and a back diffusion side opposite to the front diffusion side; a silicide layer on the front diffusion side having a back silicide side facing the diffusion region and a front silicide side opposite to the back silicide side; and a backside contact connected to the silicide layer, wherein at least a portion of the backside contact is in the back insulating layer.

公开(公告)号：US20190273116A1

公开(公告)日：2019-09-05

申请号：US16116744

申请日：2018-08-29

Applicant: QUALCOMM Incorporated

Inventor： Sinan GOKTEPELI ,  Stephen Alan FANELLI ,  Yun Han CHU

IPC: H01L27/20 ,  H03H9/05 ,  H03H9/56 ,  H03H9/64 ,  H03H3/02 ,  H03H3/08

Abstract: A radio frequency (RF) front-end (RFFE) device includes a die having a front-side dielectric layer on an active device. The active device is on a first substrate. The RFFE device also includes a microelectromechanical system (MEMS) device. The MEMS device is integrated on the die at a different layer than the active device. The MEMS device includes a cap layer composed of a cavity in the front-side dielectric layer of the die. The cavity in the front-side dielectric layer is between the first substrate and a second substrate. The cap is coupled to the front-side dielectric layer.