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公开(公告)号:US08637858B2
公开(公告)日:2014-01-28
申请号:US13240161
申请日:2011-09-22
申请人: Qiang Huang , Ulrich Denker , Gufeng He
发明人: Qiang Huang , Ulrich Denker , Gufeng He
IPC分类号: H01L51/00
CPC分类号: H01L27/3209 , H01L51/0085 , H01L51/5016 , H01L51/504 , H01L2251/5376
摘要: Organic electroluminescent devices and components containing the organic electroluminescent devices are provided herein. The organic electroluminescent devices include a substrate, a first light emitting unit, a second light emitting unit, a first electrode, and a second electrode. The light emitting units are positioned between the first and second electrode. The light emitting units have light emitting regions containing various emitter materials.
摘要翻译: 本文提供了含有有机电致发光器件的有机电致发光器件和组件。 有机电致发光器件包括衬底,第一发光单元,第二发光单元,第一电极和第二电极。 发光单元位于第一和第二电极之间。 发光单元具有包含各种发射体材料的发光区域。
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公开(公告)号:US20120074392A1
公开(公告)日:2012-03-29
申请号:US13240161
申请日:2011-09-22
申请人: Qiang Huang , Ulrich Denker , Gufeng He
发明人: Qiang Huang , Ulrich Denker , Gufeng He
IPC分类号: H01L51/52
CPC分类号: H01L27/3209 , H01L51/0085 , H01L51/5016 , H01L51/504 , H01L2251/5376
摘要: Organic electroluminescent devices and components containing the organic electroluminescent devices are provided herein. The organic electroluminescent devices include a substrate, a first light emitting unit, a second light emitting unit, a first electrode, and a second electrode. The light emitting units are positioned between the first and second electrode. The light emitting units have light emitting regions containing various emitter materials.
摘要翻译: 本文提供了含有有机电致发光器件的有机电致发光器件和组件。 有机电致发光器件包括衬底,第一发光单元,第二发光单元,第一电极和第二电极。 发光单元位于第一和第二电极之间。 发光单元具有包含各种发射体材料的发光区域。
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公开(公告)号:US08071976B2
公开(公告)日:2011-12-06
申请号:US12534402
申请日:2009-08-03
申请人: Qiang Huang , Tobias Canzler , Ulrich Denker , Ansgar Werner , Karl Leo , Kentaro Harada
发明人: Qiang Huang , Tobias Canzler , Ulrich Denker , Ansgar Werner , Karl Leo , Kentaro Harada
IPC分类号: H01L51/00
CPC分类号: H01L51/0562 , H01L27/283 , H01L51/002
摘要: The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.
摘要翻译: 本发明涉及有机场效应晶体管,特别涉及一种有机薄膜场效应晶体管,其包括栅电极,漏电极和源电极,与栅电极接触形成的电介质层,有源层 由与漏电极和源电极接触并被电气未掺杂的有机材料制成的掺杂剂材料层,其包含作为有源层的有机材料的电掺杂剂的掺杂剂材料和边界 表面区域,其中在有源层和掺杂剂材料层之间形成平面接触,其中掺杂剂材料层中类似的电荷载流子,即电子或空穴的迁移率不大于活性层的一半。
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公开(公告)号:US20100051923A1
公开(公告)日:2010-03-04
申请号:US12534394
申请日:2009-08-03
申请人: Ulrich Denker , Tobias Canzler , Qiang Huang
发明人: Ulrich Denker , Tobias Canzler , Qiang Huang
IPC分类号: H01L51/10
CPC分类号: H01L51/0529 , H01L51/0562
摘要: The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.
摘要翻译: 本发明涉及一种具有栅电极,漏电极和源电极的有机场效应晶体管,特别是有机薄层场效应晶体管,有源材料的有源层在操作期间被配置为形成 电路通道,将有源层与栅电极电隔离的介质层,掺杂剂材料层,其分子由两个或多个原子组成的分子掺杂剂材料组成,掺杂剂材料是用于有机材料的电掺杂剂 所述有源层,并且其中所述掺杂剂材料层形成在所述有源层和所述电介质层之间的边界表面区域中,或者形成为与所述边界表面区域相邻。
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公开(公告)号:US08212241B2
公开(公告)日:2012-07-03
申请号:US12534394
申请日:2009-08-03
申请人: Ulrich Denker , Tobias Canzler , Qiang Huang
发明人: Ulrich Denker , Tobias Canzler , Qiang Huang
IPC分类号: H01L51/10
CPC分类号: H01L51/0529 , H01L51/0562
摘要: The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.
摘要翻译: 本发明涉及一种具有栅电极,漏电极和源电极的有机场效应晶体管,特别是有机薄层场效应晶体管,有源材料的有源层在操作期间被配置为形成 电路通道,将有源层与栅电极电隔离的介质层,掺杂剂材料层,其分子由两个或多个原子组成的分子掺杂剂材料组成,掺杂剂材料是用于有机材料的电掺杂剂 所述有源层,并且其中所述掺杂剂材料层形成在所述有源层和所述电介质层之间的边界表面区域中,或者形成为与所述边界表面区域相邻。
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公开(公告)号:US20100065833A1
公开(公告)日:2010-03-18
申请号:US12534402
申请日:2009-08-03
申请人: Qiang Huang , Tobias Canzler , Ulrich Denker , Ansgar Werner , Karl Leo , Kentaro Harada
发明人: Qiang Huang , Tobias Canzler , Ulrich Denker , Ansgar Werner , Karl Leo , Kentaro Harada
IPC分类号: H01L51/10
CPC分类号: H01L51/0562 , H01L27/283 , H01L51/002
摘要: The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer.
摘要翻译: 本发明涉及有机场效应晶体管,特别涉及一种有机薄膜场效应晶体管,其包括栅电极,漏电极和源电极,与栅电极接触形成的电介质层,有源层 由与漏电极和源电极接触并被电气未掺杂的有机材料制成的掺杂剂材料层,其包含作为有源层的有机材料的电掺杂剂的掺杂剂材料和边界 表面区域,其中在有源层和掺杂剂材料层之间形成平面接触,其中掺杂剂材料层中类似的电荷载流子,即电子或空穴的迁移率不大于活性层的一半。
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