-
公开(公告)号:US20200044150A1
公开(公告)日:2020-02-06
申请号:US16318626
申请日:2017-07-19
申请人: Quantum Silicon Inc.
发明人: Robert A. C , Roshan ACHAI , Taleana HUFF , Hatem LABIDI , Lucian LIVADARU , Paul PIVA , Mohammad RASHIDI
摘要: A multiple-atom silicon quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated in silicon surface, each dangling bonds having one of three ionization states of +1, 0 or −1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the silicon band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.