-
公开(公告)号：US20220155339A1
公开(公告)日：2022-05-19
申请号：US17581888
申请日：2022-01-22
发明人： Mohammad Rashidi , Robert Wolkow
摘要： A method for assessing the quality of a tip of a scanning probe microscope (SPM) includes recording an SPM image, extracting a plurality of images of dangling bonds from the SPM image, feeding the extracted images of dangling bonds into a convolution neural network one image at a time, analyzing each of the plurality of images of dangling bonds using the convolution neural network, assigning each of the plurality of images of dangling bonds one of a sharp tip status or a double tip status, and determining whether the number of the plurality of images of dangling bonds of the SPM image assigned the double tip status exceeds a predetermined threshold. A method of automatically conditioning a tip of a scanning probe microscope (SPM) during imaging of a sample and a method of mass-producing atomistic quantum dots, qubits, or particular atom orbital occupation are also provided.
-
公开(公告)号：US20220130033A1
公开(公告)日：2022-04-28
申请号：US17429443
申请日：2020-02-14
申请人： Quantum Silicon Inc.
摘要： A method for autonomously applying a dangling bond pattern to a substrate for atom scale device fabrication includes inputting the pattern, initiating a patterning process, scanning the substrate using a scanning probe microscope (SPM) to generate an SPM image of the substrate, feeding the SPM image into a trained convolution neural network (CNN), analyzing the SPM image using the CNN to identify substrate defects, determining a defect free substrate area for pattern application; and applying the pattern to the substrate in that area. An atom scale electronic component includes functional patches on a substrate and wires electrically connecting the functional patches. Training a CNN includes recording a Scanning Tunneling Microscope (STM) image of the substrate, extracting images of defects from the STM image, labeling pixel-wise the defect images, and feeding the extracted and labeled images of defects into a CNN to train the CNN for semantic segmentation.
-
公开(公告)号：US11232976B2
公开(公告)日：2022-01-25
申请号：US16632460
申请日：2018-06-29
申请人： Quantum Silicon Inc. , The Governors of the University of Alberta , National Research Council of Canada
IPC分类号： H01L21/00 , H01L21/762 , H01L21/02 , H01L21/285 , H01L21/321 , H01L27/12
摘要： A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.
-
公开(公告)号：US20210373045A1
公开(公告)日：2021-12-02
申请号：US16981512
申请日：2019-03-19
发明人： Mohammad Rashidi , Robert Wolkow
摘要： A method for assessing the quality of a tip of a scanning probe microscope (SPM) includes recording an SPM image, extracting a plurality of images of dangling bonds from the SPM image, feeding the extracted images of dangling bonds into a convolution neural network one image at a time, analyzing each of the plurality of images of dangling bonds using the convolution neural network, assigning each of the plurality of images of dangling bonds one of a sharp tip status or a double tip status, and determining whether the number of the plurality of images of dangling bonds of the SPM image assigned the double tip status exceeds a predetermined threshold. A method of automatically conditioning a tip of a scanning probe microscope (SPM) during imaging of a sample and a method of mass-producing atomistic quantum dots, qubits, or particular atom orbital occupation are also provided.
-
公开(公告)号：US20200044150A1
公开(公告)日：2020-02-06
申请号：US16318626
申请日：2017-07-19
申请人： Quantum Silicon Inc.
发明人： Robert A. C , Roshan ACHAI , Taleana HUFF , Hatem LABIDI , Lucian LIVADARU , Paul PIVA , Mohammad RASHIDI
摘要： A multiple-atom silicon quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated in silicon surface, each dangling bonds having one of three ionization states of +1, 0 or −1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the silicon band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.
-
公开(公告)号：US20230093537A1
公开(公告)日：2023-03-23
申请号：US17994676
申请日：2022-11-28
申请人： National Research Council of Canada , Quantum Silicon Inc. , The Governors of the University of Alberta
发明人： Roshan Achal , Robert A. Wolkow , Jason Pitters , Martin Cloutier , Mohammad Rashidi , Marco Taucer , Taleana Huff
摘要： An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.
-
7.发明申请公开(公告)号：US20210325429A1
公开(公告)日：2021-10-21
申请号：US17361683
申请日：2021-06-29
申请人： Quantum Silicon Inc. , National Research Council of Canada , The University of British Columbia
发明人： Robert Wolkow , Mohammad Rashidi , Wyatt Vine , Thomas Dienel , Lucian Livadaru , Taleana Huff , Jacob Retallick , Konrad Walus , Jason Pitters , Roshan Achal
摘要： A method for the patterning and control of single electrons on a surface is provided that includes implementing scanning tunneling microscopy hydrogen lithography with a scanning probe microscope to form charge structures with one or more confined charges; performing a series of field-free atomic force microscopy measurements on the charge structures with different tip heights, where interaction between the tip and the confined charge are elucidated; and adjusting tip heights to controllably position charges within the structures to write a given charge state. The present disclose also provides a Gibb's distribution machine formed with the method for the patterning and control of single electrons on a surface. A multi bit true random number generator and neural network learning hardware formed with the above described method are also provided.
-
公开(公告)号：US20210184115A1
公开(公告)日：2021-06-17
申请号：US17167295
申请日：2021-02-04
申请人： Quantum Silicon Inc.
发明人： Robert A. Wolkow , Roshan Achal , Taleana Huff , Hatem Labidi , Lucian Livadaru , Paul Piva , Mohammad Rashidi
摘要： A multiple-atom germanium quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated germanium surface, each dangling bonds having one of three ionization states of +1, 0 or −1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the germanium band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.
-
公开(公告)号：US20210159116A1
公开(公告)日：2021-05-27
申请号：US16632460
申请日：2018-06-29
申请人： QUANTUM SILICON INC. , THE GOVERNORS OF THE UNIVERSITY OF ALBERTA , NATIONAL RESEARCH COUNCIL OF CANADA
IPC分类号： H01L21/762 , H01L21/02 , H01L21/285 , H01L21/321
摘要： A method for treating a wafer is provided with a portion of a semiconductor layer is selectively removed from the wafer so as to create an inactive region of the wafer surrounding a first active region of the wafer. The inactive region of the wafer has an exposed portion of an insulator layer, but none of the semiconductor layer. The first active region of the wafer includes a first portion of the semiconductor layer and a first portion of the insulator layer. At least one conductor is formed in contact with the first portion of the semiconductor layer, such that the conductor and the first portion of the semiconductor layer form a portion of an electrical circuit. The first active region of the wafer is selectively treated to remove a native oxide layer from the first portion of the semiconductor layer. A resulting wafer is also disclosed.
-
公开(公告)号：US10937959B2
公开(公告)日：2021-03-02
申请号：US16318626
申请日：2017-07-19
申请人： Quantum Silicon Inc.
发明人： Robert A. Wolkow , Roshan Achal , Taleana Huff , Hatem Labidi , Lucian Livadaru , Paul Piva , Mohammad Rashidi
IPC分类号： H01L45/00 , H01L27/24 , H01L29/66 , H01L29/34 , H01L29/12 , H01L29/76 , H01L49/00 , B82Y10/00 , B82Y30/00
摘要： A multiple-atom silicon quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated silicon surface, each dangling bonds having one of three ionization states of +1, 0 or −1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the silicon band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.
-
-
-
-
-
-
-
-
-
搜索结果
17 条记录 (耗时 0.02 秒)