公开(公告)号：US3845496A

公开(公告)日：1974-10-29

申请号：US39573373

申请日：1973-09-10

Applicant: RCA CORP

Inventor： MARTINELLI R ,  GOLDSTEIN B

IPC: H01J1/34 ,  H01J9/12

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J2201/3423

Abstract: The photocathode described has improved quantum efficiency in the near infrared wavelength region. The photocathode comprises a silicon crystal having carbon atoms bound to the silicon in the surface region and a work-function-reducing layer.

Abstract translation: 所描述的光电阴极在近红外波长区域提高了量子效率。 光电阴极包括具有与表面区域中的硅结合的碳原子的硅晶体和功函数降低层。