公开(公告)号：US3855611A

公开(公告)日：1974-12-17

申请号：US35010973

申请日：1973-04-11

Applicant: RCA CORP

Inventor： NEILSON J ,  WEISBERG H

IPC: H01L29/00 ,  H01L29/10 ,  H01L11/10

CPC classification number: H01L29/1016 ,  H01L29/00

Abstract: A thyristor has at least four semiconducting regions, adjacent regions being of opposite type conductivity, one of the regions comprising a base region of the device bounded by blocking PN junctions, the base region including a portion of relatively high conductivity, and the PN junctions bordering regions of semiconductor material of relatively low conductivity.

Abstract translation: 晶闸管具有至少四个半导体区域，相邻区域具有相反类型的导电性，其中一个区域包括由阻挡PN结限定的器件的基极区域，该基极区域包括相对较高导电率的一部分，以及PN接合点 导电性较低的半导体材料区域。