公开(公告)号：US3831187A

公开(公告)日：1974-08-20

申请号：US35011073

申请日：1973-04-11

Applicant: RCA CORP

Inventor： NEILSON J

IPC: H01L29/74 ,  H01L29/749 ,  H01L11/10 ,  H01L5/06

CPC classification number: H01L29/7436 ,  H01L29/749

Abstract: A control electrode overlies one of the base regions of the thyristor, a dielectric layer being disposed therebetween. To minimize the potential stress applied across the dielectric layer, the control electrode overlies less than the entire width of the depletion layer associated with the thyristor forward direction, voltage blocking PN junction.

Abstract translation: 控制电极覆盖晶闸管的一个基极区域，介于其间的电介质层。 为了最小化施加在电介质层上的潜在应力，控制电极覆盖小于与晶闸管正向，电压阻塞PN结相关联的耗尽层的整个宽度。

公开(公告)号：US3855611A

公开(公告)日：1974-12-17

申请号：US35010973

申请日：1973-04-11

Applicant: RCA CORP

Inventor： NEILSON J ,  WEISBERG H

IPC: H01L29/00 ,  H01L29/10 ,  H01L11/10

CPC classification number: H01L29/1016 ,  H01L29/00

Abstract: A thyristor has at least four semiconducting regions, adjacent regions being of opposite type conductivity, one of the regions comprising a base region of the device bounded by blocking PN junctions, the base region including a portion of relatively high conductivity, and the PN junctions bordering regions of semiconductor material of relatively low conductivity.

Abstract translation: 晶闸管具有至少四个半导体区域，相邻区域具有相反类型的导电性，其中一个区域包括由阻挡PN结限定的器件的基极区域，该基极区域包括相对较高导电率的一部分，以及PN接合点 导电性较低的半导体材料区域。

公开(公告)号：US3727116A

公开(公告)日：1973-04-10

申请号：US3727116D

申请日：1970-05-05

Applicant: RCA CORP

Inventor： GREENBERG L ,  THOMAS A ,  NEILSON J

IPC: H01L21/00 ,  H01L27/06 ,  H01L29/74 ,  H01L29/861 ,  H01L17/00

CPC classification number: H01L29/861 ,  H01L21/00 ,  H01L27/0688 ,  H01L29/7416

Abstract: A semiconductor switching device comprising a silicon controlled rectifier (SCR) and a diode rectifier integrally connected in parallel with the SCR in a single semiconductor body. The device is of the NPNP or PNPN type, having gate, cathode, and anode electrodes. A portion of each intermediate N and P region makes ohmic contact to the respective anode or cathode electrode of the SCR. In addition, each intermediate region includes a highly conductive edge portion. These portions are spaced from the adjacent external regions by relatively low conductive portions, and limit the conduction of the diode rectifier to the periphery of the device. A profile of gold recombination centers further electrically isolates the central SCR portion from the peripheral diode portion.

Abstract translation: 一种半导体开关器件，包括在单个半导体器件中与SCR并联连接的可控硅整流器（SCR）和二极管整流器。 该器件具有NPNP或PNPN型，具有栅极，阴极和阳极电极。 每个中间体N和P区的一部分与SCR的相应阳极或阴极发生欧姆接触。 此外，每个中间区域包括高导电性边缘部分。 这些部分通过相对低的导电部分与相邻的外部区域间隔开，并且限制二极管整流器到器件的周边的导通。 金复合中心的轮廓进一步将中央SCR部分与外围二极管部分电隔离。