公开(公告)号：US3747016A

公开(公告)日：1973-07-17

申请号：US3747016D

申请日：1971-08-26

Applicant: RCA CORP

Inventor： KRESSEL H ,  ZYGMUNT F

IPC: H01S5/00 ,  H01L33/00 ,  H01S5/32 ,  H01S3/00

CPC classification number: H01S5/32 ,  H01L33/00

Abstract: A semiconductor injection laser which emits a beam of radiation having improved beam divergence has a body of semiconductor material including a first region of one conductivity type, a second region of the opposite conductivity type and a third region of either conductivity type between the first and second regions and forming a PN junction with one of the first or second regions. The junctions between the third region and each of the first and second regions are heterojunctions which extend in substantially parallel relation to the edges of the body. The third region is of a thickness of between 0.2 and 0.3 microns and has an index of refraction which is no greater than about 0.05 higher than the index of refraction of each of the first and second regions so as to permit some of the light generated in the third region to spread out into each of the first and second regions.

Abstract translation: 发射具有改进的光束发散的辐射束的半导体注入激光器具有半导体材料体，其包括一个导电类型的第一区域，相反导电类型的第二区域和在第一和第二导电类型之间的导电类型的第三区域 并且与第一或第二区域中的一个区域形成PN结。 第三区域和第一和第二区域中的每个区域之间的接合部是以基本上平行于主体边缘延伸的异质结。 第三区域的厚度为0.2至0.3微米，并且具有不比每个第一和第二区域的折射率高大约0.05的折射率，以便允许一些在 第三个区域扩展到第一和第二个区域。