公开(公告)号：US3762968A

公开(公告)日：1973-10-02

申请号：US3762968D

申请日：1971-04-07

Applicant: RCA CORP

Inventor： KRESSEL H ,  NELSON H

IPC: H01L21/225 ,  H01L7/38

CPC classification number: H01L21/2258 ,  Y10S252/95 ,  Y10S438/912

Abstract: A body of single crystalline gallium arsenide or aluminum gallium arsenide containing a relatively low concentration of aluminum is coated by liquid phase epitaxy with a layer of aluminum gallium arsenide containing a relatively high concentration of aluminum. The aluminum gallium arsenide layer has therein a desired conductivity modifier. The coated body is heated to diffuse the conductivity modifier from the layer into the body to form a region of a desired conductivity along the surface of the body. At least a portion of the layer is etched away with an etchant which does not attack the material of the body, such as boiling hydrochloric acid, to expose at least a portion of the surface of the body.

公开(公告)号：US3855607A

公开(公告)日：1974-12-17

申请号：US36466573

申请日：1973-05-29

Applicant: RCA CORP

Inventor： KRESSEL H ,  LOCKWOOD H ,  HAWRYLO F

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/323 ,  H05B33/00

CPC classification number: H01S5/32 ,  H01S5/321 ,  H01S5/32308 ,  H01S2301/18

Abstract: A body of single crystalline semiconductor material having a radiation generating region sandwiched between two other regions. the junctions between the intermediate radiation generating region and each of the outer two regions are heterojunctions which extend to an edge of the body. The intermediate region is of a material having a bandgap energy which is lower than that of the materials of the other two regions but the difference between the bandgap energy of the intermediate region and one of the outer regions is smaller than the bandgap energy between the intermediate region and the other of the outer regions.

Abstract translation: 一种具有夹在两个其它区域之间的辐射产生区的单晶半导体材料体。 中间辐射产生区域和外部两个区域中的每一个之间的接合部是延伸到身体边缘的异质结。 中间区域是具有比其它两个区域的材料低的带隙能量的材料，但是中间区域的一个与外部区域的带隙能量之间的差小于中间区域之间的带隙能量 区域和其他外部区域。

公开(公告)号：US3747016A

公开(公告)日：1973-07-17

申请号：US3747016D

申请日：1971-08-26

Applicant: RCA CORP

Inventor： KRESSEL H ,  ZYGMUNT F

IPC: H01S5/00 ,  H01L33/00 ,  H01S5/32 ,  H01S3/00

CPC classification number: H01S5/32 ,  H01L33/00

Abstract: A semiconductor injection laser which emits a beam of radiation having improved beam divergence has a body of semiconductor material including a first region of one conductivity type, a second region of the opposite conductivity type and a third region of either conductivity type between the first and second regions and forming a PN junction with one of the first or second regions. The junctions between the third region and each of the first and second regions are heterojunctions which extend in substantially parallel relation to the edges of the body. The third region is of a thickness of between 0.2 and 0.3 microns and has an index of refraction which is no greater than about 0.05 higher than the index of refraction of each of the first and second regions so as to permit some of the light generated in the third region to spread out into each of the first and second regions.

Abstract translation: 发射具有改进的光束发散的辐射束的半导体注入激光器具有半导体材料体，其包括一个导电类型的第一区域，相反导电类型的第二区域和在第一和第二导电类型之间的导电类型的第三区域 并且与第一或第二区域中的一个区域形成PN结。 第三区域和第一和第二区域中的每个区域之间的接合部是以基本上平行于主体边缘延伸的异质结。 第三区域的厚度为0.2至0.3微米，并且具有不比每个第一和第二区域的折射率高大约0.05的折射率，以便允许一些在 第三个区域扩展到第一和第二个区域。