公开(公告)号：US20250035798A1

公开(公告)日：2025-01-30

申请号：US18914522

申请日：2024-10-14

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Thomas TIEDJE ,  Hao YUAN ,  Michael K. JACKSON

IPC: G01T1/24 ,  H01L27/146

Abstract: A radiation detector includes a radiation-sensitive semiconductor substrate, a cathode electrode disposed over a first surface of the radiation-sensitive semiconductor material substrate, and at least one anode electrode disposed over a second surface of the radiation-sensitive semiconductor material substrate, where the at least one anode electrode includes a semiconductor material layer including cadmium sulfide located between a metallic material and the semiconductor material substrate. In one embodiment, the radiation-sensitive semiconductor substrate includes cadmium zinc telluride (CZT), and the semiconductor material layer includes Cd1-xZnxTeyS1-y, where 0≤x≤0.5 and 0≤y≤0.5. Further embodiments include methods of fabricating a radiation detector that include exposing a surface of a radiation-sensitive semiconductor material substrate to a gas containing hydrogen sulfide at an elevated temperature to form a sulfide-containing semiconductor material layer.