RADIATION DETECTORS HAVING SULFIDE-CONTAINING ANODE CONTACTS AND METHODS OF FABRICATION THEREOF

    公开(公告)号:US20250035798A1

    公开(公告)日:2025-01-30

    申请号:US18914522

    申请日:2024-10-14

    Abstract: A radiation detector includes a radiation-sensitive semiconductor substrate, a cathode electrode disposed over a first surface of the radiation-sensitive semiconductor material substrate, and at least one anode electrode disposed over a second surface of the radiation-sensitive semiconductor material substrate, where the at least one anode electrode includes a semiconductor material layer including cadmium sulfide located between a metallic material and the semiconductor material substrate. In one embodiment, the radiation-sensitive semiconductor substrate includes cadmium zinc telluride (CZT), and the semiconductor material layer includes Cd1-xZnxTeyS1-y, where 0≤x≤0.5 and 0≤y≤0.5. Further embodiments include methods of fabricating a radiation detector that include exposing a surface of a radiation-sensitive semiconductor material substrate to a gas containing hydrogen sulfide at an elevated temperature to form a sulfide-containing semiconductor material layer.

    RADIATION DETECTOR ARRAYS HAVING INCREASED EFFICIENCY AND METHODS OF OPERATING THEREOF

    公开(公告)号:US20230280486A1

    公开(公告)日:2023-09-07

    申请号:US18170290

    申请日:2023-02-16

    CPC classification number: G01T7/005 G01T1/249 G01T1/247

    Abstract: Various embodiments include methods of compensating for signal loss due to depth-of-interaction (DOI) effects in radiation detectors, thereby improving detector efficiency. Various embodiments may include detecting the amplitude of a primary charge signal in a first pixel of an array of detector pixels in response to a photon interaction event, detecting the amplitude of a secondary charge signal in a second pixel of the array, where the amplitude of the secondary charge signal has an opposite polarity than the polarity of the primary charge signal, and generating a corrected photon energy measurement of the photon interaction event by applying a correction to the detected amplitude of the primary charge signal based on the detected amplitude of the secondary charge signal. Further embodiments include methods of improving detector efficiency by compensating for both depth-of-interaction (DOI) and charge sharing effects.

    SPECTRAL PHOTON COUNTING RADIATION DETECTOR STRUCTURES HAVING IMPROVED COUNT STABILITY AND METHODS OF OPERATING THEREOF

    公开(公告)号:US20250102689A1

    公开(公告)日:2025-03-27

    申请号:US18819380

    申请日:2024-08-29

    Abstract: Detector structures including at least one radiation sensor including an array of pixel detectors, an application specific integrated circuit (ASIC) including a plurality of signal processing channel circuits electrically coupled to respective pixel detectors of the array of pixel detectors, each signal processing channel circuit generating photon count data for multiple energy bins for a respective pixel detector, and at least one compensation circuit that receives photon count data for multiple energy bins from one or more signal processing channel circuits and adjusts a response characteristic of at least one signal processing channel circuit of the ASIC based on the received photon count data. The adjustments to the response characteristic of at least one signal processing channel circuit may include adjusting energy thresholds and/or providing a compensation current to compensate for spectral shift and improve count stability.

    RADIATION DETECTOR ARRAY WITH STAGGERED DETECTOR MODULES

    公开(公告)号:US20250102449A1

    公开(公告)日:2025-03-27

    申请号:US18823111

    申请日:2024-09-03

    Abstract: A detector array includes a plurality of radiation sensors each including a two dimensional array of pixel detectors. The plurality of radiation sensors are arranged in rows of pixel detectors extending in a first direction and columns of pixel detectors extending in a second direction, and at least some of the plurality of the radiation sensors that are located adjacent to one another along the first direction are offset from one another along the second direction by an integer number of pixel detectors.

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