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1.
公开(公告)号:US20250035798A1
公开(公告)日:2025-01-30
申请号:US18914522
申请日:2024-10-14
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Thomas TIEDJE , Hao YUAN , Michael K. JACKSON
IPC: G01T1/24 , H01L27/146
Abstract: A radiation detector includes a radiation-sensitive semiconductor substrate, a cathode electrode disposed over a first surface of the radiation-sensitive semiconductor material substrate, and at least one anode electrode disposed over a second surface of the radiation-sensitive semiconductor material substrate, where the at least one anode electrode includes a semiconductor material layer including cadmium sulfide located between a metallic material and the semiconductor material substrate. In one embodiment, the radiation-sensitive semiconductor substrate includes cadmium zinc telluride (CZT), and the semiconductor material layer includes Cd1-xZnxTeyS1-y, where 0≤x≤0.5 and 0≤y≤0.5. Further embodiments include methods of fabricating a radiation detector that include exposing a surface of a radiation-sensitive semiconductor material substrate to a gas containing hydrogen sulfide at an elevated temperature to form a sulfide-containing semiconductor material layer.
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2.
公开(公告)号:US20230280486A1
公开(公告)日:2023-09-07
申请号:US18170290
申请日:2023-02-16
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Xavier DEFAY , Michael K. JACKSON , Krzysztof INIEWSKI
Abstract: Various embodiments include methods of compensating for signal loss due to depth-of-interaction (DOI) effects in radiation detectors, thereby improving detector efficiency. Various embodiments may include detecting the amplitude of a primary charge signal in a first pixel of an array of detector pixels in response to a photon interaction event, detecting the amplitude of a secondary charge signal in a second pixel of the array, where the amplitude of the secondary charge signal has an opposite polarity than the polarity of the primary charge signal, and generating a corrected photon energy measurement of the photon interaction event by applying a correction to the detected amplitude of the primary charge signal based on the detected amplitude of the secondary charge signal. Further embodiments include methods of improving detector efficiency by compensating for both depth-of-interaction (DOI) and charge sharing effects.
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公开(公告)号:US20250102689A1
公开(公告)日:2025-03-27
申请号:US18819380
申请日:2024-08-29
Applicant: RedLen Technologies, Inc.
Inventor: Michael K. JACKSON , Krzysztof INIEWSKI
Abstract: Detector structures including at least one radiation sensor including an array of pixel detectors, an application specific integrated circuit (ASIC) including a plurality of signal processing channel circuits electrically coupled to respective pixel detectors of the array of pixel detectors, each signal processing channel circuit generating photon count data for multiple energy bins for a respective pixel detector, and at least one compensation circuit that receives photon count data for multiple energy bins from one or more signal processing channel circuits and adjusts a response characteristic of at least one signal processing channel circuit of the ASIC based on the received photon count data. The adjustments to the response characteristic of at least one signal processing channel circuit may include adjusting energy thresholds and/or providing a compensation current to compensate for spectral shift and improve count stability.
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公开(公告)号:US20250102449A1
公开(公告)日:2025-03-27
申请号:US18823111
申请日:2024-09-03
Applicant: RedLen Technologies, Inc.
Inventor: Michael K. JACKSON , Devon RICHTSMEIER , Krzysztof INIEWSKI
IPC: G01N23/046 , H01L27/146
Abstract: A detector array includes a plurality of radiation sensors each including a two dimensional array of pixel detectors. The plurality of radiation sensors are arranged in rows of pixel detectors extending in a first direction and columns of pixel detectors extending in a second direction, and at least some of the plurality of the radiation sensors that are located adjacent to one another along the first direction are offset from one another along the second direction by an integer number of pixel detectors.
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公开(公告)号:US20230077602A1
公开(公告)日:2023-03-16
申请号:US17931397
申请日:2022-09-12
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Amir AFSHAR , Pramodha MARTHANDAM , Jennifer JENSEN , Michael K. JACKSON , James BALCOM
IPC: G01T1/24 , H01L27/146 , H01L23/544
Abstract: A method of fabricating radiation sensor dies includes forming a plurality of radiation-sensitive detector elements and a plurality of visible identifiers on at least some of the radiation-sensitive detector elements on a substrate, where each visible identifier is located in a different sub-region of the substrate containing a subset of the radiation-sensitive detector elements, and separating the sub-regions of the substrate from one another to provide a plurality of radiation sensor dies, where the visible identifier on each radiation sensor die uniquely identifies the radiation sensor die with respect to the other radiation sensor dies of the plurality of radiation sensor dies.
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公开(公告)号:US20240418877A1
公开(公告)日:2024-12-19
申请号:US18612350
申请日:2024-03-21
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Krzysztof INIEWSKI , Michael K. JACKSON , Yuxin SONG
IPC: G01T1/24 , G01N23/046 , G01N23/083
Abstract: Application specific integrated circuits (ASICs) for direct attach radiation detector structures include an array of unit cells including signal processing channel circuitry and data transmission through-substrate vias (TSVs) with reduced cross-talk between the signal processing channel circuitry and the data transmission TSVs.
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公开(公告)号:US20210333420A1
公开(公告)日:2021-10-28
申请号:US17225416
申请日:2021-04-08
Applicant: REDLEN TECHNOLOGIES, INC.
Inventor: Krzysztof INIEWSKI , Michael K. JACKSON , Michael AYUKAWA
IPC: G01T1/29 , H01L27/146
Abstract: A radiation detector includes a semiconductor layer having opposing first and second surfaces, anodes disposed over the first surface of the semiconductor layer in a pixel pattern, a cathode disposed over the second surface of the semiconductor layer, and an electrically conductive pattern disposed over the first surface of the semiconductor layer in interpixel gaps between the anodes. At least a portion of the electrically conductive pattern is not electrically connected to an external bias source.
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