公开(公告)号：US20080142476A1

公开(公告)日：2008-06-19

申请号：US11612036

申请日：2006-12-18

申请人： RENEE KOCH ,  Scott A. Anderson

发明人： RENEE KOCH ,  Scott A. Anderson

IPC分类号： C23F1/00

CPC分类号： G03F1/30

摘要： Methods for etching quartz are provided herein. In one embodiment, a method of etching quartz includes providing a film stack on a substrate support disposed in a processing chamber, the film stack having a quartz layer partially exposed through a patterned layer; and etching the quartz layer of the film stack in a multi-step process including a first step of etching the quartz layer utilizing a first process gas comprising at least one fluorocarbon process gas and a chlorine-containing process gas; and a second step of etching the quartz layer utilizing a second process gas comprising at least one fluorocarbon process gas.

摘要翻译： 本文提供了蚀刻石英的方法。 在一个实施例中，蚀刻石英的方法包括在设置在处理室中的衬底支撑件上提供膜堆叠，所述膜堆叠具有部分地通过图案化层暴露的石英层; 并且以多步骤方法蚀刻所述薄膜叠层的石英层，其包括利用包括至少一种氟碳工艺气体和含氯工艺气体的第一工艺气体来蚀刻所述石英层的第一步骤; 以及利用包含至少一种氟碳工艺气体的第二工艺气体蚀刻所述石英层的第二步骤。

公开(公告)号：US20100276391A1

公开(公告)日：2010-11-04

申请号：US12748519

申请日：2010-03-29

申请人： MICHAEL N. GRIMBERGEN ,  KEVEN KAISHENG YU ,  ALAN HIROSHI OUYE ,  MADHAVI R. CHANDRACHOOD ,  VALENTIN N. TODOROW ,  TOI YUE BECKY LEUNG ,  RICHARD LEWINGTON ,  DARIN BIVENS ,  RENEE KOCH ,  IBRAHIM M. IBRAHIM ,  AMITABH SABHARWAL ,  AJAY KUMAR

发明人： MICHAEL N. GRIMBERGEN ,  KEVEN KAISHENG YU ,  ALAN HIROSHI OUYE ,  MADHAVI R. CHANDRACHOOD ,  VALENTIN N. TODOROW ,  TOI YUE BECKY LEUNG ,  RICHARD LEWINGTON ,  DARIN BIVENS ,  RENEE KOCH ,  IBRAHIM M. IBRAHIM ,  AMITABH SABHARWAL ,  AJAY KUMAR

IPC分类号： H05H1/46

CPC分类号： H01J37/32165 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/67069

摘要： Methods of operating inductively coupled plasma (ICP) reactors having ICP sources and substrate bias with phase control are provided herein. In some embodiments, a method of operating a first plasma reactor having a source RF generator inductively coupled to the first plasma reactor on one side of a substrate support surface of a substrate support within the first plasma reactor and a bias RF generator coupled to the substrate support on an opposing side of the substrate support surface, wherein the source RF generator and the bias RF generator provide respective RF signals at a common frequency may include selecting a desired value of a process parameter for a substrate to be processed; and adjusting the phase between respective RF signals provided by the source RF generator and the bias RF generator to a desired phase based upon a predetermined relationship between the process parameter and the phase.

摘要翻译： 本文提供了具有ICP源和具有相位控制的衬底偏置的电感耦合等离子体（ICP）反应器的方法。 在一些实施例中，一种操作第一等离子体反应器的方法，该等离子体反应器具有在第一等离子体反应器内的衬底支撑体的衬底支撑表面的一侧感应耦合到第一等离子体反应器的源RF发生器和耦合到衬底的偏置RF发生器 支撑在衬底支撑表面的相对侧上，其中源RF发生器和偏置RF发生器以公共频率提供相应的RF信号可以包括为要处理的衬底选择期望值的工艺参数; 以及基于所述过程参数和所述相位之间的预定关系，将源RF发生器和所述偏置RF发生器提供的相应RF信号之间的相位调整到期望的相位。