公开(公告)号：US20240339304A1

公开(公告)日：2024-10-10

申请号：US18617334

申请日：2024-03-26

Applicant: Tokyo Electron Limited

Inventor： Kazushi Kaneko ,  Satoru Kawakami ,  Yuki Osada

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/32165

Abstract: There is a plasma processing apparatus comprising: a processing chamber having a processing space; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation; a dielectric having a first surface; an electromagnetic wave supply part configured to supply the electromagnetic waves to the processing space via the dielectric; and a resonator array structure disposed along the first surface of the dielectric, wherein the resonator array structure includes a plurality of resonators, each resonator having a structure in which a conductive member is laminated on one surface of a dielectric plate, having a first resonance frequency, capable of resonating with magnetic field components of the electromagnetic waves and having a size smaller than a wavelength of the electromagnetic waves, and the resonator array structure is configured to form cells surrounded by the resonators, and the cells include the resonators having different first resonance frequencies between the cells.

公开(公告)号：US12057292B2

公开(公告)日：2024-08-06

申请号：US18201358

申请日：2023-05-24

Applicant: Applied Materials, Inc.

Inventor： Leonid Dorf ,  Evgeny Kamenetskiy ,  James Rogers ,  Olivier Luere ,  Rajinder Dhindsa ,  Viacheslav Plotnikov

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683

CPC classification number: H01J37/32128 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3299 ,  H01L21/31116 ,  H01J2237/3341 ,  H01L21/6831

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US12046451B2

公开(公告)日：2024-07-23

申请号：US17750653

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Kyun Kim ,  Seung Bo Shim ,  Doug Yong Sung ,  Seung Han Baek ,  Ju Ho Lee

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32165 ,  H01J37/32183 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/3065

Abstract: A plasma etching apparatus may include a first source electrode, a first bias electrode, and a second bias electrode configured to generate a plasma by supplying energy to a process gas injected into a chamber; and a controller. The controller may be configured to supply a first high-frequency RF power, a first low-frequency RF power, and a second low-frequency RF power to the chamber during a first period from a first time to a second time; ramp down and turn off the first high-frequency RF power to the chamber during a second period from the second time to a third time; and ramp down and turn off the first low-frequency RF power to the chamber during a third period from the second time to a fourth time different from the third time. The third period may be smaller than ½ of the first period and greater than the second period.

公开(公告)号：US12040159B2

公开(公告)日：2024-07-16

申请号：US17726783

申请日：2022-04-22

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Maolin Long

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/321 ,  H01J37/32165

Abstract: Matching circuitry is disclosed for power generation in a plasma processing apparatus or other application. Matching circuitry is provided in a unitary physical enclosure and is configured to provide impedance matching at multiple different frequencies. For example, in a dual frequency implementation, first and second RF generators can provide electromagnetic energy at first and second respective frequencies in a continuous mode or a pulsed mode to matching circuitry that includes first and second circuit portions. The first circuit portion can include one or more first tuning elements configured to receive RF power at a first frequency and provide impedance matching for a first ICP load (e.g., a primary inductive element). The second circuit portion can include one or more second tuning elements configured to receive RF power at a second different frequency and provide impedance matching for a second ICP load (e.g., a secondary inductive element).

公开(公告)号：US11996271B2

公开(公告)日：2024-05-28

申请号：US17468839

申请日：2021-09-08

Applicant: Tokyo Electron Limited

Inventor： Satoshi Tanaka

IPC: H01J37/32 ,  H01J37/16 ,  H01J37/248 ,  H01L21/02 ,  H01L21/3065 ,  H05H1/46

CPC classification number: H01J37/3244 ,  H01J37/16 ,  H01J37/248 ,  H01L21/02164 ,  H01L21/3065 ,  H05H1/46 ,  H01J37/32165

Abstract: A plasma etching apparatus includes a processing vessel, a stage, a gas supply, a first high frequency power supply, a second high frequency power supply and a control device. The stage is provided and configured to place thereon a substrate. The gas supply is configured to supply a processing gas. The first high frequency power supply is configured to supply a first high frequency power. The second high frequency power supply is configured to supply a second high frequency power to the stage. The control device controls a supply and a stop of the supply of each of the first and the second high frequency powers at every preset cycle. The first and the second high frequency powers are supplied exclusively. A ratio of a supply time with respect to a single cycle of the first high frequency power is lower than that of the second high frequency power.

公开(公告)号：US20240170257A1

公开(公告)日：2024-05-23

申请号：US18392239

申请日：2023-12-21

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32165

Abstract: In a plasma processing apparatus, a radio-frequency power supply adjusts frequencies of radio-frequency power in each bias cycle of electrical bias energy. The radio-frequency power supply uses a reference time series of frequencies of the radio-frequency power in each bias cycle. The radio-frequency power supply repeats using a changed time series of frequencies of the radio-frequency power in each bias cycle to increase a degree of match based on an evaluation value. The changed time series results from shifting the reference time series by a phase shift amount, scaling the reference time series in a frequency direction, or scaling two or more of multiple time zones of the reference time series in a time direction.

公开(公告)号：US11990317B2

公开(公告)日：2024-05-21

申请号：US18086406

申请日：2022-12-21

Applicant: DAIHEN CORPORATION

Inventor： Yuichi Hasegawa

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32183 ,  H01J2237/327

Abstract: To simplify a process of suppressing an increase in a reflected wave power caused by IMD, provided is a high-frequency power supply system for providing a high-frequency power to a load, including: a first power supply for supplying a first high-frequency power to the load; a second power supply for supplying a second high-frequency power to the load; and a matching device. The matching device provides a system clock to each of the first power supply and the second power supply. The second power supply outputs a second high-frequency voltage at a control period determined based on the system clock provided from the matching device. The first power supply outputs a first high-frequency voltage obtained by frequency modulation of a fundamental wave signal having a first fundamental frequency and through amplification, in each control period determined based on the system clock provided from the matching device.

公开(公告)号：US11984306B2

公开(公告)日：2024-05-14

申请号：US17562467

申请日：2021-12-27

Applicant: Applied Materials, Inc.

Inventor： Rajinder Dhindsa ,  Linying Cui ,  James Rogers

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32862 ,  H01J37/32128 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32449 ,  H01J37/32577 ,  H01L21/02274

Abstract: Embodiments provided herein generally include plasma processing systems configured to preferentially clean desired surfaces of a substrate support assembly by manipulating one or more characteristics of an in-situ plasma and related methods. In one embodiment, a plasma processing method includes generating a plasma in a processing region defined by a chamber lid and a substrate support assembly, exposing an edge ring and a substrate supporting surface to the plasma, and establishing a pulsed voltage (PV) waveform at the edge control electrode.

公开(公告)号：US11984297B2

公开(公告)日：2024-05-14

申请号：US17711181

申请日：2022-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin Oh ,  Youngdo Kim ,  Sanghun Kim ,  Sungyeol Kim ,  Younghwan Kim ,  Taemin Earmme ,  Changyun Lee ,  Sunghun Jang

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32183 ,  H01J37/32165 ,  H01J37/32568 ,  H01L21/31116 ,  H01J2237/334

Abstract: A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.

公开(公告)号：US20240128054A1

公开(公告)日：2024-04-18

申请号：US18199982

申请日：2023-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changho Kim ,  Donghyeon Na ,  Yoonbum Nam ,  Seungbo Shim ,  Kyungsun Kim ,  Namkyun Kim

IPC: H01J37/32 ,  H01L21/66

CPC classification number: H01J37/32165 ,  H01J37/32183 ,  H01J37/32642 ,  H01J37/32715 ,  H01L22/26 ,  H01J37/32568 ,  H01J37/32917 ,  H01J2237/2007 ,  H01J2237/24564 ,  H01J2237/334

Abstract: A plasma control apparatus includes a first transmission line and a second transmission line transferring radio frequency (RF) power to a plasma chamber, a matcher disposed on the first transmission line a first plasma control circuit disposed on the first transmission line and configured to selectively and independently control harmonics of one or more of the at least two frequencies, a sensor configured to sense the harmonics of the plasma chamber, and an auxiliary RF power source disposed on the second transmission line and configured to generate auxiliary RF power to cancel out the harmonics sensed by the sensor, wherein, in a plan view, the first transmission line transfers the RF power adjacent to the center of the plasma chamber, and the second transmission line transfers the RF power and the auxiliary RF power and the auxiliary RF power adjacent to an edge of the plasma chamber.