公开(公告)号：US20210249353A1

公开(公告)日：2021-08-12

申请号：US16784960

申请日：2020-02-07

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hirokazu SAYAMA ,  Fumihiko HAYASHI ,  Junjiro SAKAI

IPC: H01L23/535 ,  H01L21/74 ,  H01L21/762 ,  H01L21/764

Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor layer, a first insulating film, and a conductive film. The semiconductor layer is formed on the semiconductor substrate. A first trench reaching the semiconductor substrate is formed within the semiconductor layer. The first insulating film is formed on the inner side surface of the first trench such that a portion of the semiconductor substrate is exposed in the first trench. The conductive film is electrically connected with the semiconductor substrate and formed on the inner side surface of the first trench through the first insulating film. In plan view, a first length of the first trench in an extending direction of the first trench is greater than a second length of the first trench in a width direction perpendicular to the extending direction, and equal to or less than 30 μm.

公开(公告)号：US20230030778A1

公开(公告)日：2023-02-02

申请号：US17938497

申请日：2022-10-06

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hirokazu SAYAMA ,  Fumihiko HAYASHI ,  Junjiro SAKAI

IPC: H01L23/535 ,  H01L21/74 ,  H01L21/762 ,  H01L21/764

Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor layer, a first insulating film, and a conductive film. The semiconductor layer is formed on the semiconductor substrate. A first trench reaching the semiconductor substrate is formed within the semiconductor layer. The first insulating film is formed on the inner side surface of the first trench such that a portion of the semiconductor substrate is exposed in the first trench. The conductive film is electrically connected with the semiconductor substrate and formed on the inner side surface of the first trench through the first insulating film. In plan view, a first length of the first trench in an extending direction of the first trench is greater than a second length of the first trench in a width direction perpendicular to the extending direction, and equal to or less than 30 μm.