公开(公告)号：US11270971B2

公开(公告)日：2022-03-08

申请号：US16576424

申请日：2019-09-19

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kenji Ikura ,  Hideki Ishii ,  Takehiko Maeda ,  Takeumi Kato

IPC: H01L23/00 ,  H01L23/528

Abstract: A semiconductor device capable of suppressing propagation of a crack caused by a temperature cycle at a bonding part between a bonding pad and a bonding wire is provided. A semiconductor device according to an embodiment includes a semiconductor chip having bonding pads and bonding wires. The bonding pad includes a barrier layer and a bonding layer formed on the barrier layer and formed of a material containing aluminum. The bonding wire is bonded to the bonding pad and formed of a material containing copper. An intermetallic compound layer formed of an intermetallic compound containing copper and aluminum is formed so as to reach the barrier layer from the bonding wire in at least a part of the bonding part between the bonding pad and the bonding wire.