公开(公告)号：US20240088287A1

公开(公告)日：2024-03-14

申请号：US18347146

申请日：2023-07-05

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Takahiro OHARA ,  Koichi ARAI ,  Yasunori YAMASHITA ,  Hideyuki YASHIMA

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/7803 ,  H01L29/401 ,  H01L29/66712

Abstract: A semiconductor device includes a semiconductor substrate, a first insulating film formed on an upper surface of the semiconductor substrate in an outer peripheral region so as to surround a cell region in plan view, and a resistive element formed on the first insulating film so as to surround the cell region in plan view. A second insulating film having a thickness thinner than that of the first insulating film is formed on the upper surface of the semiconductor substrate in the outer peripheral region. A dummy pattern is formed from a portion over the second insulating film to a portion over the first insulating film so as to cover a step occurring between the second insulating film and the first insulating film.