公开(公告)号：US20190318990A1

公开(公告)日：2019-10-17

申请号：US16370370

申请日：2019-03-29

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kazuyuki NAKAGAWA ,  Shinji BABA ,  Hiroshi KOIZUMI

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L23/34 ,  H01L23/00

Abstract: A semiconductor device includes a wiring substrate provided with a plurality of pads electrically connected to a semiconductor chip in a flip-chip interconnection. The wiring substrate includes a pad forming layer in which a signal pad configured to receive transmission of a first signal and a second pad configured to receive transmission of a second signal different from the first signal are formed and a first wiring layer located at a position closest to the pad forming layer. In the wiring layer, a via land overlapping with the signal pad, a wiring connected to the via land, and a wiring connected to the second pad and extending in an X direction are formed. In a Y direction intersecting the X direction, a width of the via land is larger than a width of the wiring. A wiring is adjacent to the via land and overlaps with the signal pad.