公开(公告)号：US20190199103A1

公开(公告)日：2019-06-27

申请号：US16193641

申请日：2018-11-16

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Kohei KAWANO ,  Tsuyoshi OTA

IPC: H02J7/00

CPC classification number: H02J7/008

Abstract: A semiconductor device capable of turning a discharge control transistor off faster while maintaining safety is provided. A control unit, in discharge stopping processing, turns a switching element on and executes a first discharge-stopping mode in which the gate voltage of the discharge control transistor is withdrawn via a load and, at a predetermined discharge-stopping mode switching timing, switches to a second discharge-stopping mode in which the gate voltage of the discharge control transistor is withdrawn directly to a low-voltage power source.