公开(公告)号：US20130285207A1

公开(公告)日：2013-10-31

申请号：US13864464

申请日：2013-04-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Satoshi MAEDA ,  Maya UENO

IPC: H01L49/02

CPC classification number: H03B5/1237 ,  H01L27/0802 ,  H01L28/20 ,  H03K3/011 ,  H03K3/02 ,  H03K3/26 ,  H03L7/093

Abstract: Disclosed is a semiconductor device. The semiconductor device includes a functional circuit having a resistor formed by a plurality of polysilicon resistors, and in which the property of the functional circuit can be adjusted by trimming the resistor, and in which the polysilicon resistors are coupled in series or in parallel to each other and arranged in a direction perpendicular to one side of the semiconductor device.

公开(公告)号：US20160204741A1

公开(公告)日：2016-07-14

申请号：US15077125

申请日：2016-03-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Satoshi MAEDA ,  Maya UENO

IPC: H03B5/24 ,  H03K3/011 ,  H01L27/092 ,  H01L27/06 ,  H01L49/02

CPC classification number: H03B5/1237 ,  H01L27/0802 ,  H01L28/20 ,  H03K3/011 ,  H03K3/02 ,  H03K3/26 ,  H03L7/093

Abstract: Disclosed is a semiconductor device. The semiconductor device includes a functional circuit having a resistor formed by a plurality of polysilicon resistors, and in which the property of the functional circuit can be adjusted by trimming the resistor, and in which the polysilicon resistors are coupled in series or in parallel to each other and arranged in a direction perpendicular to one side of the semiconductor device.

公开(公告)号：US20150116047A1

公开(公告)日：2015-04-30

申请号：US14585283

申请日：2014-12-30

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Satoshi MAEDA ,  Maya UENO

IPC: H03B5/12

CPC classification number: H03B5/1237 ,  H01L27/0802 ,  H01L28/20 ,  H03K3/011 ,  H03K3/02 ,  H03K3/26 ,  H03L7/093

Abstract: Disclosed is a semiconductor device. The semiconductor device includes a functional circuit having a resistor formed by a plurality of polysilicon resistors, and in which the property of the functional circuit can be adjusted by trimming the resistor, and in which the polysilicon resistors are coupled in series or in parallel to each other and arranged in a direction perpendicular to one side of the semiconductor device.

Abstract translation: 公开了一种半导体器件。 半导体器件包括具有由多个多晶硅电阻器形成的电阻器的功能电路，其功能电路的特性可以通过微调电阻来调整，并且其中多晶硅电阻器与每个多晶硅电阻串联或并联耦合 另一个并且沿垂直于半导体器件的一侧的方向布置。