Semiconductor device
    1.
    发明授权

    公开(公告)号:US10896876B2

    公开(公告)日:2021-01-19

    申请号:US16653164

    申请日:2019-10-15

    IPC分类号: H03F3/45 H01L23/528 H03G3/30

    摘要: In a semiconductor device having a variable gain amplifier, a setting error of a gain associated with a crosstalk noise is reduced. A switch block included in the variable gain amplifier includes a plurality of switch transistors Mp1, Mp2, MN1, and Mn2, and can variably set the parallel number of the switches used for coupling by selecting a forward coupling state for coupling the common wirings CSP, CSN to output wirings OUTP, OUTN, respectively, or a cross coupling state for coupling to OUTN, OUTP, respectively. Output wirings OUTN, OUTP form an output wiring pair by extending in a X direction while crossing each other through an underlying wiring layer ML[x-1]. At least one of the common wirings CSP, CSN is located next to the output wiring pair in a Y direction.

    Phase shifter
    2.
    发明授权

    公开(公告)号:US10903813B2

    公开(公告)日:2021-01-26

    申请号:US16575078

    申请日:2019-09-18

    摘要: A phase shifter capable of improving phase accuracy by a simple method is provided. The phase shifter includes a hybrid coupler circuit including inductors with mutual inductances, an amplifying circuit, an impedance matching circuit provided between the hybrid coupler circuit and the amplifying circuit. The impedance matching circuit includes a first resistance element connected to an output node of the hybrid coupler circuit, a capacitance element connected between the first resistance element and the ground line in series, another inductor connected in parallel with the first resistance element, and a second resistance element provided between the inductor and the ground line in series.