Semiconductor memory device permitting boundary scan test
    1.
    发明申请
    Semiconductor memory device permitting boundary scan test 审中-公开
    半导体存储器允许边界扫描测试

    公开(公告)号:US20040250165A1

    公开(公告)日:2004-12-09

    申请号:US10649682

    申请日:2003-08-28

    CPC classification number: G11C29/48 G11C2029/3202

    Abstract: A boundary scan cell in a semiconductor memory device (memory core) is provided corresponding to each terminal for performing a boundary scan test. A test controller and a read/write control circuit cause the boundary scan cell to latch input write data in a late write operation, until a next write cycle of the write cycle at which the write data was input from the terminal.

    Abstract translation: 半导体存储器件(存储器核心)中的边界扫描单元对应于每个用于执行边界扫描测试的端子被提供。 测试控制器和读/写控制电路使得边界扫描单元在迟写操作中锁存输入写入数据,直到写入数据从终端输入的写周期的下一个写周期为止。

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