公开(公告)号：US20220136995A1

公开(公告)日：2022-05-05

申请号：US17485733

申请日：2021-09-27

申请人： RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

发明人： Woo Jong YU ,  Young Rae KIM ,  Thanh Luan PHAN

IPC分类号： G01N27/414

摘要： An electric field variable gas sensor includes a semiconductor substrate, an insulating film disposed on the semiconductor substrate, a semiconductor thin film material disposed on a part of the semiconductor substrate and a part of the insulating film, a gas molecule adsorption inducing material disposed on the semiconductor thin film material, a first electrode disposed on the semiconductor substrate to be spaced apart from the semiconductor thin film material, and a second electrode disposed on the insulating film to be connected with the semiconductor thin film material.

公开(公告)号：US20220310792A1

公开(公告)日：2022-09-29

申请号：US17699783

申请日：2022-03-21

申请人： RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

发明人： Woojong YU ,  Thanh Luan PHAN ,  Hyungjin KIM

IPC分类号： H01L29/12 ,  B82B1/00 ,  B82B3/00

摘要： An electronic device is disclosed. The electronic device includes: a first electrode disposed on a substrate and extending in a first direction; a second electrode disposed above the first electrode and extending in a second direction intersecting the first direction; and at least one switching particle disposed between the first electrode and the second electrode and bonded to the first electrode and the second electrode via van der Waals bond, wherein the switching particle controls flow of current between the first electrode and the second electrode, based on a difference of voltages of the first electrode and the second electrode applied thereto.

公开(公告)号：US20220123208A1

公开(公告)日：2022-04-21

申请号：US17491843

申请日：2021-10-01

申请人： Research & Business Foundation Sungkyunkwan University

发明人： Woojong YU ,  Thanh Luan PHAN ,  Hyungjin KIM

IPC分类号： H01L45/00 ,  H01L27/24

摘要： Provided is a memristor including an active electrode made of a first conductive material including an active metal; an inert electrode spaced from and facing toward the active electrode and made of a second conductive material having an ionization energy greater than the ionization energy of the first conductive material; and a resistive switching layer including: a porous insulating layer disposed between the active electrode and the inert electrode, wherein the porous insulating layer has through-channel holes defined therein extending from a bottom face to a top face thereof; and conductive filaments respectively formed inside the through-channel holes.