公开(公告)号：US20190189628A1

公开(公告)日：2019-06-20

申请号：US16215900

申请日：2018-12-11

申请人： Research & Business Foundation Sungkyunkwan University

发明人： Woo Jong YU ,  Vu Quoc AN ,  Ui Yeon WON

IPC分类号： H01L27/11521 ,  H01L27/11526 ,  H01L29/66

CPC分类号： H01L27/11521 ,  H01L27/11526 ,  H01L29/66825

摘要： The present disclosure provides a vertical tunneling random access memory comprising: a first electrode disposed on a base substrate; a second electrode vertically spaced from the first electrode; a floating gate disposed between the first electrode and the second electrode and configured to charge or discharge charges; a tunneling insulating layer disposed between the first electrode and the floating gate; a barrier insulating layer disposed between the floating gate and the second electrode; a contact hole passing through the tunneling insulating layer and the barrier insulating layer for partially exposing the first electrode; a semiconductor pattern extending from the second electrode, along and on a portion of a side wall face defining the contact hole, to the first electrode such that one end of the semiconductor pattern is in contact with the first electrode and the other end of the pattern is in contact with the second electrode.

公开(公告)号：US20210020774A1

公开(公告)日：2021-01-21

申请号：US16928475

申请日：2020-07-14

申请人： Research & Business Foundation Sungkyunkwan University

发明人： Woo Jong YU ,  Ui Yeon WON ,  Quoc An VU

IPC分类号： H01L29/788 ,  G06N3/063 ,  H01L29/86 ,  H01L29/423 ,  H01L27/11519 ,  H01L27/11521

摘要： Disclosed is a floating gate memristor device comprising: a substrate; a floating gate disposed on the substrate; an insulating layer covering the floating gate; a first electrode including a plurality of control terminals disposed on the insulating layer and spaced apart from each other, wherein the plurality of control terminals vertically overlap the floating gate; a second electrode spaced away from the first electrode, wherein a ground voltage is applied to the second electrode; and a third electrode disposed on the substrate and electrically connected to the floating gate.

公开(公告)号：US20220136995A1

公开(公告)日：2022-05-05

申请号：US17485733

申请日：2021-09-27

申请人： RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

发明人： Woo Jong YU ,  Young Rae KIM ,  Thanh Luan PHAN

IPC分类号： G01N27/414

摘要： An electric field variable gas sensor includes a semiconductor substrate, an insulating film disposed on the semiconductor substrate, a semiconductor thin film material disposed on a part of the semiconductor substrate and a part of the insulating film, a gas molecule adsorption inducing material disposed on the semiconductor thin film material, a first electrode disposed on the semiconductor substrate to be spaced apart from the semiconductor thin film material, and a second electrode disposed on the insulating film to be connected with the semiconductor thin film material.

公开(公告)号：US20230067092A1

公开(公告)日：2023-03-02

申请号：US17894242

申请日：2022-08-24

申请人： Research & Business Foundation Sungkyunkwan University

发明人： Woo Jong YU ,  Ui Yeon WON ,  Quoc An VU

IPC分类号： H01L29/788 ,  G06N3/063 ,  H01L27/11521 ,  H01L29/423 ,  H01L27/11519 ,  H01L29/86

摘要： Disclosed is a floating gate memristor device comprising: a substrate; a floating gate disposed on the substrate; an insulating layer covering the floating gate; a first electrode including a plurality of control terminals disposed on the insulating layer and spaced apart from each other, wherein the plurality of control terminals vertically overlap the floating gate; a second electrode spaced away from the first electrode, wherein a ground voltage is applied to the second electrode; and a third electrode disposed on the substrate and electrically connected to the floating gate.