公开(公告)号：US20160056151A1

公开(公告)日：2016-02-25

申请号：US14831428

申请日：2015-08-20

Applicant: RF Micro Devices, Inc.

Inventor： David Charles Sheridan ,  Xing Huang

IPC: H01L27/06 ,  H01L29/78 ,  H01L29/778 ,  H01L29/20 ,  H01L29/16

CPC classification number: H01L29/78 ,  H01L21/8236 ,  H01L27/0883 ,  H01L29/16 ,  H03K17/0822

Abstract: A power semiconductor device has an upper transistor and a lower transistor that is coupled in cascode with the upper transistor. The upper transistor comprises an upper drain, upper gate, and an upper source. The lower transistor comprises a lower drain that is coupled to the upper source, a lower gate, and a lower source that is coupled to the upper gate. The upper transistor is a depletion mode device and has a first saturation current. The lower transistor is an enhancement mode device and has a second saturation current, which is lower than the first saturation current.

Abstract translation: 功率半导体器件具有与上部晶体管共栅共享的上部晶体管和下部晶体管。 上部晶体管包括上部漏极，上部栅极和上部源极。 下部晶体管包括耦合到上部源极的下部漏极，下部栅极和耦合到上部栅极的下部源极。 上部晶体管是耗尽型器件，具有第一饱和电流。 下部晶体管是增强型器件，并且具有低于第一饱和电流的第二饱和电流。

公开(公告)号：US09673312B2

公开(公告)日：2017-06-06

申请号：US14831428

申请日：2015-08-20

Applicant: RF Micro Devices, Inc.

Inventor： David Charles Sheridan ,  Xing Huang

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/16 ,  H01L21/8236 ,  H03K17/082

CPC classification number: H01L29/78 ,  H01L21/8236 ,  H01L27/0883 ,  H01L29/16 ,  H03K17/0822

Abstract: A power semiconductor device has an upper transistor and a lower transistor that is coupled in cascode with the upper transistor. The upper transistor comprises an upper drain, upper gate, and an upper source. The lower transistor comprises a lower drain that is coupled to the upper source, a lower gate, and a lower source that is coupled to the upper gate. The upper transistor is a depletion mode device and has a first saturation current. The lower transistor is an enhancement mode device and has a second saturation current, which is lower than the first saturation current.