公开(公告)号：US20190278111A1

公开(公告)日：2019-09-12

申请号：US16420096

申请日：2019-05-22

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Guomin Yu ,  Hooman Abediasl ,  Damiana Lerose ,  Amit Singh Nagra ,  Pradeep Srinivasan ,  Haydn Jones

IPC: G02F1/01 ,  H01L21/78 ,  H01L27/30 ,  G02B6/13 ,  G02F1/225 ,  G02B6/136 ,  G01J1/04

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

公开(公告)号：US10928659B2

公开(公告)日：2021-02-23

申请号：US16275157

申请日：2019-02-13

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Andrew Rickman ,  Aaron Zilkie ,  Guomin Yu ,  Hooman Abediasl ,  Damiana Lerose ,  Amit Singh Nagra ,  Pradeep Srinivasan ,  Haydn Jones

IPC: H04Q11/00 ,  H04B10/29 ,  G02F1/025 ,  H04B10/299 ,  G02F1/015

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

公开(公告)号：US10921616B2

公开(公告)日：2021-02-16

申请号：US16420096

申请日：2019-05-22

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Guomin Yu ,  Hooman Abediasl ,  Damiana Lerose ,  Amit Singh Nagra ,  Pradeep Srinivasan ,  Haydn Jones

IPC: G02F1/01 ,  G02B6/136 ,  G02B6/13 ,  G02F1/225 ,  H01L21/78 ,  G01J1/04

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

公开(公告)号：US10816830B2

公开(公告)日：2020-10-27

申请号：US16275157

申请日：2019-02-13

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Andrew Rickman ,  Aaron Zilkie ,  Guomin Yu ,  Hooman Abediasl ,  Damiana Lerose ,  Amit Singh Nagra ,  Pradeep Srinivasan ,  Haydn Jones

IPC: H04Q11/00 ,  H04B10/29 ,  G02F1/025 ,  H04B10/299 ,  G02F1/015

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

公开(公告)号：US20190179177A1

公开(公告)日：2019-06-13

申请号：US16275157

申请日：2019-02-13

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Andrew Rickman ,  Aaron Zilkie ,  Guomin Yu ,  Hooman Abediasl ,  Damiana Lerose ,  Amit Singh Nagra ,  Pradeep Srinivasan ,  Haydn Jones

IPC: G02F1/025

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.