公开(公告)号：US11022824B2

公开(公告)日：2021-06-01

申请号：US16463337

申请日：2017-11-23

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Guomin Yu ,  Aaron Zilkie

IPC: G02F1/01 ,  G02B6/00 ,  G02F1/017 ,  G02F1/015

Abstract: A silicon based electro-optically active device and method of production thereof. The device comprising: a silicon-on-insulator (SOI) layer; an electro-optically active stack, disposed on top of the SOI layer: a first epitaxially grown structure comprising a first passive waveguide and a second epitaxially grown structure comprising a second passive waveguide, the first and second passive waveguides being disposed adjacent to respective sides of the electro-optically active stack, wherein the first and second passive waveguides are configured to edge couple light from the first passive waveguide into the electro-optically active stack and from the electro-optically active stack into the second passive waveguide; and an evanescent coupling structure, for evanescently coupling light between the SOI layer and the first and second passive waveguides.

公开(公告)号：US10955692B2

公开(公告)日：2021-03-23

申请号：US15321723

申请日：2016-11-10

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Guomin Yu ,  Hooman Abediasl ,  Damiana Lerose ,  Kevin Masuda ,  Andrea Trita ,  Aaron Zilkie

IPC: G02F1/025 ,  G02F1/015 ,  G02B6/122 ,  G02B6/13 ,  G02B6/136 ,  G02F1/17 ,  G02F1/21 ,  G02B6/12

Abstract: An optoelectronic component including a waveguide, the waveguide comprising an optically active region (OAR), the OAR having an upper and a lower surface; a lower doped region, wherein the lower doped region is located at and/or adjacent to at least a portion of a lower surface of the OAR, and extends laterally outwards from the OAR in a first direction; an upper doped region, wherein the upper doped region is located at and/or adjacent to at least a portion of an upper surface of the OAR, and extends laterally outwards from the OAR in a second direction; and an intrinsic region located between the lower doped region and the upper doped region.

公开(公告)号：US20200295537A1

公开(公告)日：2020-09-17

申请号：US16889656

申请日：2020-06-01

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Aaron Zilkie

IPC: H01S5/125 ,  H01S5/026 ,  H01S5/14 ,  H01S5/068 ,  H01S5/12 ,  H01S5/50

Abstract: A discrete wavelength tunable laser having an optical cavity which comprises: a reflective semiconductor optical amplifier (SOA); a demultiplexer (Demux) having a single input and a plurality of outputs, the Demux configured to receive the output of the SOA and to produce a plurality of fixed spectral passbands within the gain bandwidth of the SOA; one or more tunable distributed Bragg reflector(s) (DBR(s)) arranged to receive the outputs of the Demux, each tunable DBR configured to select a reflective spectral band within the gain bandwidth of the SOA upon application of a bias current; wherein the SOA forms the back end mirror of the optical cavity; the one or more tunable DBRs form the front end mirror of the optical cavity; and wherein the lasing channel of the discrete wavelength tunable laser is chosen by the overlap of the selected reflective spectral band of one of the one or more tunable DBRs with a fixed spectral passband of the Demux.

公开(公告)号：US20160131862A1

公开(公告)日：2016-05-12

申请号：US14752476

申请日：2015-06-26

Applicant: Rockley Photonics Limited

Inventor： Andrew Rickman ,  Guomin Yu ,  Aaron Zilkie ,  Haydn F. Jones

IPC: G02B6/43 ,  G02B6/12 ,  G02B6/42

CPC classification number: G02B6/43 ,  G02B6/12019 ,  G02B6/3548 ,  G02B6/356 ,  G02B6/4279 ,  G02B6/4295 ,  G02F1/025 ,  H04B10/40

Abstract: An optical waveguide device comprising: one or more photonic chips, the one or more photonic chips including: a first portion of a photonic chip comprising an array of first components, each of the first components having an optical input and an electrical output; and a second portion of a photonic chip comprising an array of second components, each of the second components configured to receive an electrical input; the optical waveguide device further comprising: an integrated circuit; the integrated circuit forming an electrical bridge between the electrical outputs of the first components and respective electrical inputs of the second components; wherein the integrated circuit is directly mounted onto the one or more photonic chips; and/or wherein the integrated circuit is located between the first portion of a photonic chip and the second portion of a photonic chip.

Abstract translation: 一种光波导装置，包括：一个或多个光子芯片，所述一个或多个光子芯片包括：包括第一部件阵列的光子芯片的第一部分，所述第一部件中的每一个具有光输入和电输出; 以及包括第二组件阵列的光子芯片的第二部分，所述第二组件中的每一个被配置为接收电输入; 所述光波导装置还包括：集成电路; 所述集成电路在所述第一组件的电输出和所述第二组件的相应电输入之间形成电桥; 其中所述集成电路直接安装在所述一个或多个光子芯片上; 和/或其中集成电路位于光子芯片的第一部分和光子芯片的第二部分之间。

公开(公告)号：US10928659B2

公开(公告)日：2021-02-23

申请号：US16275157

申请日：2019-02-13

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Andrew Rickman ,  Aaron Zilkie ,  Guomin Yu ,  Hooman Abediasl ,  Damiana Lerose ,  Amit Singh Nagra ,  Pradeep Srinivasan ,  Haydn Jones

IPC: H04Q11/00 ,  H04B10/29 ,  G02F1/025 ,  H04B10/299 ,  G02F1/015

Abstract: An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.

公开(公告)号：US10359588B2

公开(公告)日：2019-07-23

申请号：US15914981

申请日：2018-03-07

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Andrew Rickman ,  Guomin Yu ,  Aaron Zilkie ,  Haydn F. Jones

IPC: G02B6/12 ,  G02B6/35 ,  G02B6/42 ,  G02B6/43 ,  G02F1/025 ,  H04B10/40

Abstract: An optical waveguide device comprising: one or more photonic chips, the one or more photonic chips including: a first portion of a photonic chip comprising an array of first components, each of the first components having an optical input and an electrical output; and a second portion of a photonic chip comprising an array of second components, each of the second components configured to receive an electrical input; the optical waveguide device further comprising: an integrated circuit; the integrated circuit forming an electrical bridge between the electrical outputs of the first components and respective electrical inputs of the second components; wherein the integrated circuit is directly mounted onto the one or more photonic chips; and/or wherein the integrated circuit is located between the first portion of a photonic chip and the second portion of a photonic chip.

公开(公告)号：US09946042B2

公开(公告)日：2018-04-17

申请号：US14752476

申请日：2015-06-26

Applicant: Rockley Photonics Limited

Inventor： Andrew Rickman ,  Guomin Yu ,  Aaron Zilkie ,  Haydn F. Jones

IPC: G02B6/43 ,  H04B10/40 ,  G02B6/12 ,  G02F1/025 ,  G02B6/42 ,  G02B6/35

CPC classification number: G02B6/43 ,  G02B6/12019 ,  G02B6/3548 ,  G02B6/356 ,  G02B6/4279 ,  G02B6/4295 ,  G02F1/025 ,  H04B10/40

Abstract: An optical waveguide device comprising: one or more photonic chips, the one or more photonic chips including: a first portion of a photonic chip comprising an array of first components, each of the first components having an optical input and an electrical output; and a second portion of a photonic chip comprising an array of second components, each of the second components configured to receive an electrical input; the optical waveguide device further comprising: an integrated circuit; the integrated circuit forming an electrical bridge between the electrical outputs of the first components and respective electrical inputs of the second components; wherein the integrated circuit is directly mounted onto the one or more photonic chips; and/or wherein the integrated circuit is located between the first portion of a photonic chip and the second portion of a photonic chip.

公开(公告)号：US11699892B2

公开(公告)日：2023-07-11

申请号：US16889656

申请日：2020-06-01

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Aaron Zilkie

IPC: H01S5/14 ,  H01S5/10 ,  H01S5/125 ,  H01S5/026 ,  H01S5/068 ,  H01S5/50 ,  H01S5/12 ,  H01S5/40 ,  H01S5/00

CPC classification number: H01S5/1092 ,  H01S5/0268 ,  H01S5/068 ,  H01S5/124 ,  H01S5/125 ,  H01S5/142 ,  H01S5/50 ,  H01S5/005 ,  H01S5/141 ,  H01S5/4012 ,  H01S5/4062

Abstract: A discrete wavelength tunable laser having an optical cavity which comprises: a reflective semiconductor optical amplifier (SOA); a demultiplexer (Demux) having a single input and a plurality of outputs, the Demux configured to receive the output of the SOA and to produce a plurality of fixed spectral passbands within the gain bandwidth of the SOA; one or more tunable distributed Bragg reflector(s) (DBR(s)) arranged to receive the outputs of the Demux, each tunable DBR configured to select a reflective spectral band within the gain bandwidth of the SOA upon application of a bias current; wherein the SOA forms the back end mirror of the optical cavity; the one or more tunable DBRs form the front end mirror of the optical cavity; and wherein the lasing channel of the discrete wavelength tunable laser is chosen by the overlap of the selected reflective spectral band of one of the one or more tunable DBRs with a fixed spectral passband of the Demux.

公开(公告)号：US11600532B2

公开(公告)日：2023-03-07

申请号：US17324953

申请日：2021-05-19

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Aaron Zilkie ,  Andrew Rickman ,  Damiana Lerose

IPC: H01L21/8238 ,  H01L21/8258 ,  G02B6/13 ,  G02B6/136 ,  G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  G02B6/122 ,  H01L21/762 ,  G02B6/132 ,  G02B6/134 ,  H01S5/02

Abstract: A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 μm to 13 μm.

公开(公告)号：US11296794B2

公开(公告)日：2022-04-05

申请号：US16494675

申请日：2018-03-15

Applicant: ROCKLEY PHOTONICS LIMITED ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Arian Hashemi Talkhooncheh ,  Azita Emami ,  Yi Zhang ,  Aaron Zilkie

IPC: H04B10/50 ,  G02F1/015 ,  G02F1/225 ,  H04B10/54 ,  G02F1/21

Abstract: An optoelectronic device for quadrature-amplitude modulation (QAM) and a method of modulating light according to the same. The device comprising: an input waveguide; two intermediate waveguides, each coupled to the input waveguide via an input coupler; and an output waveguide, coupled to each of the intermediate waveguides via an output coupler; wherein each intermediate waveguide includes a modulating component connected in series with a phase shifting component, and each modulating component is connected to a respective electronic driver, the electronic drivers together being operable to produce a QAM-N modulated output from light entering the device from the input waveguide.