公开(公告)号：US11605930B2

公开(公告)日：2023-03-14

申请号：US16826122

申请日：2020-03-20

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Mazin Alalusi ,  Kevin Masuda ,  Pradeep Srinivasan

IPC: G02B6/12 ,  H01S3/067

Abstract: A Distributed Feedback Laser (DFB) mounted on a Silicon Photonic Integrated Circuit (Si PIC), the DFB having a longitudinal length which extends from a first end of the DFB laser to a second end of the DFB laser, the DFB laser comprising: an epi stack, the epi stack comprising: one or more active material layers; a layer comprising a partial grating, the partial grating extending from the second end of the DFB laser, only partially along the longitudinal length of the DFB laser such that it does not extend to the first end of the DFB laser; a highly reflective medium located at the first end of the DFB laser; and a back facet located at the second end of the DFB laser.

公开(公告)号：US20200303891A1

公开(公告)日：2020-09-24

申请号：US16826122

申请日：2020-03-20

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Mazin Alalusi ,  Kevin Masuda ,  Pradeep Srinivasan

IPC: H01S3/067 ,  G02B6/12

Abstract: A Distributed Feedback Laser (DFB) mounted on a Silicon Photonic Integrated Circuit (Si PIC), the DFB having a longitudinal length which extends from a first end of the DFB laser to a second end of the DFB laser, the DFB laser comprising: an epi stack, the epi stack comprising: one or more active material layers; a layer comprising a partial grating, the partial grating extending from the second end of the DFB laser, only partially along the longitudinal length of the DFB laser such that it does not extend to the first end of the DFB laser; a highly reflective medium located at the first end of the DFB laser; and a back facet located at the second end of the DFB laser.

公开(公告)号：US10955692B2

公开(公告)日：2021-03-23

申请号：US15321723

申请日：2016-11-10

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Guomin Yu ,  Hooman Abediasl ,  Damiana Lerose ,  Kevin Masuda ,  Andrea Trita ,  Aaron Zilkie

IPC: G02F1/025 ,  G02F1/015 ,  G02B6/122 ,  G02B6/13 ,  G02B6/136 ,  G02F1/17 ,  G02F1/21 ,  G02B6/12

Abstract: An optoelectronic component including a waveguide, the waveguide comprising an optically active region (OAR), the OAR having an upper and a lower surface; a lower doped region, wherein the lower doped region is located at and/or adjacent to at least a portion of a lower surface of the OAR, and extends laterally outwards from the OAR in a first direction; an upper doped region, wherein the upper doped region is located at and/or adjacent to at least a portion of an upper surface of the OAR, and extends laterally outwards from the OAR in a second direction; and an intrinsic region located between the lower doped region and the upper doped region.