公开(公告)号：US20230223433A1

公开(公告)日：2023-07-13

申请号：US18172830

申请日：2023-02-22

Applicant: ROHM CO., LTD.

Inventor： Yuki NAKANO ,  Masaya UENO ,  Sawa HARUYAMA ,  Yasuhiro KAWAKAMI ,  Seiya NAKAZAWA ,  Yasunori KUTSUMA

IPC: H01L29/04 ,  H01L21/04 ,  H01L21/761 ,  H01L21/78 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L29/045 ,  H01L21/78 ,  H01L21/0465 ,  H01L21/761 ,  H01L29/0623 ,  H01L29/872 ,  H01L29/1608 ,  H01L29/6606

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.

公开(公告)号：US20230019769A1

公开(公告)日：2023-01-19

申请号：US17954049

申请日：2022-09-27

Applicant: ROHM CO., LTD.

Inventor： Seiya NAKAZAWA ,  Sawa HARUYAMA

IPC: H01L29/417 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66

Abstract: A semiconductor device includes an SiC semiconductor layer which has a first main surface on one side and a second main surface on the other side, a semiconductor element which is formed in the first main surface, a raised portion group which includes a plurality of raised portions formed at intervals from each other at the second main surface and has a first portion in which some of the raised portions among the plurality of raised portions overlap each other in a first direction view as viewed in a first direction which is one of the plane directions of the second main surface, and an electrode which is formed on the second main surface and connected to the raised portion group.

公开(公告)号：US20250031428A1

公开(公告)日：2025-01-23

申请号：US18905287

申请日：2024-10-03

Applicant: ROHM CO., LTD.

Inventor： Seiya NAKAZAWA ,  Sawa HARUYAMA

IPC: H01L29/417 ,  H01L21/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872

Abstract: A semiconductor device includes an SiC semiconductor layer which has a first main surface on one side and a second main surface on the other side, a semiconductor element which is formed in the first main surface, a raised portion group which includes a plurality of raised portions formed at intervals from each other at the second main surface and has a first portion in which some of the raised portions among the plurality of raised portions overlap each other in a first direction view as viewed in a first direction which is one of the plane directions of the second main surface, and an electrode which is formed on the second main surface and connected to the raised portion group.

公开(公告)号：US20210234007A1

公开(公告)日：2021-07-29

申请号：US17265454

申请日：2019-08-08

Applicant: ROHM CO., LTD.

Inventor： Masaya UENO ,  Yuki NAKANO ,  Sawa HARUYAMA ,  Yasuhiro KAWAKAMI ,  Seiya NAKAZAWA ,  Yasunori KUTSUMA

IPC: H01L29/16 ,  H01L29/04

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

公开(公告)号：US20210233994A1

公开(公告)日：2021-07-29

申请号：US17265453

申请日：2019-08-08

Applicant: ROHM CO., LTD.

Inventor： Yuki NAKANO ,  Masaya UENO ,  Sawa HARUYAMA ,  Yasuhiro KAWAKAMI ,  Seiya NAKAZAWA ,  Yasunori KUTSUMA

IPC: H01L29/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/872 ,  H01L21/04 ,  H01L21/761 ,  H01L21/78 ,  H01L29/66

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.

公开(公告)号：US20240282825A1

公开(公告)日：2024-08-22

申请号：US18654028

申请日：2024-05-03

Applicant: ROHM CO., LTD.

Inventor： Masaya UENO ,  Yuki NAKANO ,  Sawa HARUYAMA ,  Yasuhiro KAWAKAMI ,  Seiya NAKAZAWA ,  Yasunori KUTSUMA

IPC: H01L29/16 ,  H01L29/04

CPC classification number: H01L29/1608 ,  H01L29/045

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

公开(公告)号：US20230223445A1

公开(公告)日：2023-07-13

申请号：US18180599

申请日：2023-03-08

Applicant: ROHM CO., LTD.

Inventor： Masaya UENO ,  Yuki NAKANO ,  Sawa HARUYAMA ,  Yasuhiro KAWAKAMI ,  Seiya NAKAZAWA ,  Yasunori KUTSUMA

IPC: H01L29/16 ,  H01L29/04

CPC classification number: H01L29/1608 ,  H01L29/045

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

公开(公告)号：US20210296448A1

公开(公告)日：2021-09-23

申请号：US17266028

申请日：2019-08-08

Applicant: ROHM CO., LTD.

Inventor： Yasuhiro KAWAKAMI ,  Yuki NAKANO ,  Masaya UENO ,  Seiya NAKAZAWA ,  Sawa HARUYAMA ,  Yasunori KUTSUMA

IPC: H01L29/16 ,  C30B23/02 ,  C30B29/36 ,  H01L29/78

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as a device surface, a second main surface at a side opposite to the first main surface, and a side surface connecting the first main surface and the second main surface, a main surface insulating layer including an insulating material, covering the first main surface of the SiC semiconductor layer, and having an insulating side surface continuous to the side surface of the SiC semiconductor layer, and a boundary modified layer including a first region that is modified to be of a property differing from the SiC monocrystal and a second region that is modified to be of a property differing from the insulating material, and being formed across the side surface of the SiC semiconductor layer and the insulating side surface of the main surface insulating layer.

公开(公告)号：US20210020754A1

公开(公告)日：2021-01-21

申请号：US16981127

申请日：2019-03-26

Applicant: ROHM CO., LTD.

Inventor： Seiya NAKAZAWA ,  Sawa HARUYAMA

IPC: H01L29/417 ,  H01L21/04 ,  H01L29/66 ,  H01L29/16

Abstract: A semiconductor device includes an SiC semiconductor layer which has a first main surface on one side and a second main surface on the other side, a semiconductor element which is formed in the first main surface, a raised portion group which includes a plurality of raised portions formed at intervals from each other at the second main surface and has a first portion in which some of the raised portions among the plurality of raised portions overlap each other in a first direction view as viewed in a first direction which is one of the plane directions of the second main surface, and an electrode which is formed on the second main surface and connected to the raised portion group.