公开(公告)号：US20220140141A1

公开(公告)日：2022-05-05

申请号：US17428555

申请日：2020-02-07

Applicant: ROHM CO., LTD.

Inventor： Kentaro NASU ,  Yasuhiro KONDO ,  Takaaki YOSHIOKA

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor layer that has a main surface, a trench gate structure that includes a trench formed in the main surface and having a first sidewall at one side, a second sidewall at the other side and a bottom wall in a cross-sectional view, an insulation layer formed on an inner wall of the trench, and a gate electrode embedded in the trench with the insulation layer between the trench and the gate electrode and having an upper end portion positioned at a bottom-wall side with respect to the main surface, a plurality of first-conductivity-type drift regions that are respectively formed in a region at the first sidewall side of the trench and in a region at the second sidewall side of the trench such as to face each other with the trench interposed therebetween in a surface layer portion of the main surface and that are positioned in a region at the main surface side with respect to the bottom wall, and a plurality of first-conductivity-type source/drain regions that are formed in surface layer portions of the plurality of drift regions, respectively.

公开(公告)号：US20220344466A1

公开(公告)日：2022-10-27

申请号：US17640241

申请日：2020-09-25

Applicant: ROHM CO., LTD.

Inventor： Kentaro NASU ,  Takaaki YOSHIOKA

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/16 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor chip having a main surface, a first conductivity type drift layer formed in a surface layer portion of the main surface, a trench gate structure formed in the main surface such as to be in contact with the drift layer, a second conductivity type channel region formed in the drift layer such as to cover a side wall of the trench gate structure, and first and second source/drain regions formed at intervals in a region along the side wall of the trench gate structure in the drift layer such as to oppose each other across the channel region.