公开(公告)号：US20100313940A1

公开(公告)日：2010-12-16

申请号：US12677535

申请日：2008-09-09

申请人： Ralf Boris Wehrspohn ,  Stefan Schweizer

发明人： Ralf Boris Wehrspohn ,  Stefan Schweizer

IPC分类号： H01L31/04 ,  H01L31/18

CPC分类号： H01L31/055 ,  Y02E10/52

摘要： A solar cell and a method for producing a solar cell are described, comprising at least one photovoltaic layer region (1) which at least partially absorbs photons (6) incident therein, whose photon energy is greater than a minimum photon energy Emin, and releases electrical charge carriers in the form of electron-hole pairs, which are spatially separable within the photovoltaic layer region (1) and can be tapped via at least two electrodes (2), which are electrically connected to the photovoltaic layer region (1), to implement an electrical voltage, and comprising at least one interaction layer (3 and/or 4), which at least partially overlaps the photovoltaic layer region, in which at least a part of the incident photons (6) are subject to an interaction with emission of photons of higher or lower photon energy than that of the incident photons. The invention is distinguished in that the at least one interaction layer (3 and/or 4) has a matrix structure, in which locally delimited areas having optically active material, which has the structure and size of crystalline nanoparticles, are provided and interact with the incident photons (6).

摘要翻译： 描述了太阳能电池和太阳能电池的制造方法，其包括至少部分地吸收光子能量大于最小光子能量Emin的光子（6）至少部分吸收的至少一个光伏层区域（1） 电子 - 空穴对形式的电荷载体，其在光电转换层区域（1）内可在空间上分离，并可通过电连接到光伏层区域（1）的至少两个电极（2）进行抽头， 以实现电压，并且包括至少部分与光伏层区域重叠的至少一个相互作用层（3和/或4），其中至少一部分入射光子（6）经受与 发射比入射光子更高或更低的光子能量的光子。 本发明的区别在于，至少一个相互作用层（3和/或4）具有矩阵结构，其中具有结晶纳米颗粒的结构和尺寸的具有光学活性材料的局部限定区域被提供并与 事件光子（6）。

公开(公告)号：US06870970B2

公开(公告)日：2005-03-22

申请号：US10128512

申请日：2002-04-24

申请人： Stephen W. Leonard ,  Henry M. van Driel ,  Jorg Schilling ,  Ralf Boris Wehrspohn ,  Ulrich Gosele ,  Stefan Senz

发明人： Stephen W. Leonard ,  Henry M. van Driel ,  Jorg Schilling ,  Ralf Boris Wehrspohn ,  Ulrich Gosele ,  Stefan Senz

IPC分类号： G02B6/122 ,  G02F1/01 ,  G02F1/295

CPC分类号： B82Y20/00 ,  G02B6/1225 ,  G02F1/0126 ,  G02F2202/32

摘要： The present invention provides a method for fast switching of optical properties in photonic crystals using pulsed/modulated free-carrier injection. The results disclosed herein indicate that several types of photonic crystal devices can be designed in which free carriers are used to vary dispersion curves, stop gaps in materials with photonic bandgaps to vary the bandgaps, reflection, transmission, absorption, gain, or phase. The use of pulsed free carrier injection to control the properties of photonic crystals on fast timescales forms the basis for all-optical switching using photonic crystals. Ultrafast switching of the band edge of a two-dimensional silicon photonic crystal is demonstrated near a wavelength of 1.9 μm. Changes in the refractive index are optically induced by injecting free carriers with 800 nm, 300 fs pulses. Band-edge shifts have been induced in silicon photonic crystals of up to 29 nm that occurs on the time-scale of the pump pulse. The present invention also provides a method of producing a virtual or temporary photonic crystal using free carrier injection into pure semiconductors, bulk or thin film, in which the carriers are generated in patterns which create a patterned refractive index contrast used to steer light beams in the semiconductor while it is being pulsed.

摘要翻译： 本发明提供了使用脉冲/调制自由载流子注入在光子晶体中快速切换光学特性的方法。 本文公开的结果表明，可以设计几种类型的光子晶体器件，其中使用自由载流子来改变色散曲线，阻止具有光子带隙的材料中的间隙以改变带隙，反射，透射，吸收，增益或相位。 使用脉冲自由载流子注入来控制光子晶体在快速时间尺度上的性质，形成了使用光子晶体的全光开关的基础。 二维硅光子晶体的带边缘的超快切换被证明在1.9μm波长附近。 通过注入具有800nm，300fs脉冲的自由载流子来光折射率的变化。 在泵浦脉冲的时间尺度上发生的高达29nm的硅光子晶体中已经诱发了带边移位。 本发明还提供一种使用自由载流子注入到纯半导体，体或薄膜中的虚拟或临时光子晶体的方法，其中载流子以图案生成，其形成图案化的折射率对比度，用于将光束引导到 半导体在被脉冲时。