利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.009 秒)

    Method of varying optical properties of photonic crystals on fast time scales using energy pulses
    2.
    发明授权
    Method of varying optical properties of photonic crystals on fast time scales using energy pulses 失效
    使用能量脉冲在快速时间尺度上改变光子晶体的光学性质的方法

    公开(公告)号：US06870970B2

    公开(公告)日：2005-03-22

    申请号：US10128512

    申请日：2002-04-24

    申请人： Stephen W. Leonard ,  Henry M. van Driel ,  Jorg Schilling ,  Ralf Boris Wehrspohn ,  Ulrich Gosele ,  Stefan Senz

    发明人： Stephen W. Leonard ,  Henry M. van Driel ,  Jorg Schilling ,  Ralf Boris Wehrspohn ,  Ulrich Gosele ,  Stefan Senz

    IPC分类号： G02B6/122 ,  G02F1/01 ,  G02F1/295

    CPC分类号： B82Y20/00 ,  G02B6/1225 ,  G02F1/0126 ,  G02F2202/32

    摘要： The present invention provides a method for fast switching of optical properties in photonic crystals using pulsed/modulated free-carrier injection. The results disclosed herein indicate that several types of photonic crystal devices can be designed in which free carriers are used to vary dispersion curves, stop gaps in materials with photonic bandgaps to vary the bandgaps, reflection, transmission, absorption, gain, or phase. The use of pulsed free carrier injection to control the properties of photonic crystals on fast timescales forms the basis for all-optical switching using photonic crystals. Ultrafast switching of the band edge of a two-dimensional silicon photonic crystal is demonstrated near a wavelength of 1.9 μm. Changes in the refractive index are optically induced by injecting free carriers with 800 nm, 300 fs pulses. Band-edge shifts have been induced in silicon photonic crystals of up to 29 nm that occurs on the time-scale of the pump pulse. The present invention also provides a method of producing a virtual or temporary photonic crystal using free carrier injection into pure semiconductors, bulk or thin film, in which the carriers are generated in patterns which create a patterned refractive index contrast used to steer light beams in the semiconductor while it is being pulsed.

    摘要翻译： 本发明提供了使用脉冲/调制自由载流子注入在光子晶体中快速切换光学特性的方法。 本文公开的结果表明，可以设计几种类型的光子晶体器件，其中使用自由载流子来改变色散曲线，阻止具有光子带隙的材料中的间隙以改变带隙，反射，透射，吸收，增益或相位。 使用脉冲自由载流子注入来控制光子晶体在快速时间尺度上的性质，形成了使用光子晶体的全光开关的基础。 二维硅光子晶体的带边缘的超快切换被证明在1.9μm波长附近。 通过注入具有800nm，300fs脉冲的自由载流子来光折射率的变化。 在泵浦脉冲的时间尺度上发生的高达29nm的硅光子晶体中已经诱发了带边移位。 本发明还提供一种使用自由载流子注入到纯半导体，体或薄膜中的虚拟或临时光子晶体的方法，其中载流子以图案生成，其形成图案化的折射率对比度，用于将光束引导到 半导体在被脉冲时。

    Method of manufacturing microstructures and also microstructure
    4.
    发明授权
    Method of manufacturing microstructures and also microstructure 失效
    微观结构的制造方法和微结构

    公开(公告)号：US5985412A

    公开(公告)日：1999-11-16

    申请号：US974897

    申请日：1997-11-20

    申请人： Ulrich Gosele

    发明人： Ulrich Gosele

    IPC分类号： B81B3/00 ,  B81C1/00 ,  H01L21/18 ,  B32B3/00 ,  B32B31/00

    CPC分类号： B81C1/00293 ,  H01L21/187 ,  B81C2203/0118 ,  Y10S438/906 ,  Y10S438/974 ,  Y10T428/24612 ,  Y10T428/24661

    摘要： A method of manufacturing microstructures in which a hollow cavity is formed in a first wafer, in particular, a silicon wafer, and the hollow cavity is, covered over by a second wafer, which is in particular, also a silicon wafer, by a wafer bonding process in vacuum for the formation of an enclosed hollow cavity, wherein the wafer bonding is carried out in an ultra-high vacuum in order to achieve the smallest possible internal pressure in the hollow cavity of less than 0.1 mbar. The surfaces of the wafers which are to be brought into contact with one another are treated by a surface cleaning process in order to produce at least substantially pure surfaces, i.e. surfaces which consist substantially only of the material of the respective wafer and which are at least substantially free of H.sub.2 O, H.sub.2 and O.sub.2. A microstructure is also claimed.

    摘要翻译： 一种制造微结构的方法，其中在第一晶片，特别是硅晶片中形成中空腔，并且中空腔被第二晶片覆盖，第二晶片特别是硅晶片由晶片 用于形成封闭的中空腔的真空中的接合过程，其中晶片接合在超高真空中进行，以便在中空腔中实现尽可能小的内部压力小于0.1毫巴。 通过表面清洁处理来处理要彼此接触的晶片的表面，以便产生至少基本上纯的表面，即基本上仅由相应晶片的材料组成并且至少基本上是 基本上不含H 2 O，H 2和O 2。 还要求微结构。

    Method for the releasable bonding and subsequent separation of reversibly bonded and polished wafers and also a wafer structure and wafer
    5.
    发明授权
    Method for the releasable bonding and subsequent separation of reversibly bonded and polished wafers and also a wafer structure and wafer 失效
    用于可剥离粘合和抛光晶片以及晶片结构和晶片的可剥离粘合和随后分离的方法

    公开(公告)号：US6010591A

    公开(公告)日：2000-01-04

    申请号：US974278

    申请日：1997-11-19

    申请人： Ulrich Gosele

    发明人： Ulrich Gosele

    IPC分类号： H01L21/68 ,  B32B31/00

    CPC分类号： H01L21/6835 ,  H01L21/2007 ,  H01L21/67092 ,  H01L2221/68381 ,  Y10S148/012 ,  Y10S156/93 ,  Y10T156/11

    摘要： A method for the releasable bonding of at least two wafers (10, 12), for example of two silicon wafers (silicon discs), or of a silicon wafer and a glass wafer, or of a semiconductor wafer and a cover wafer, by a wafer bonding method in which the surfaces to be brought into contact with one another are at least substantially optically smooth and flat. Prior to bringing the surfaces of the wafers (10, 12) into contact, one or more drops of a liquid are applied to at least one of the surfaces, and the wafer bonding method is carried out at least substantially at room temperature, or at a somewhat higher temperature, or optionally at a somewhat lower temperature. The wafers (10, 12) which are bonded together can easily be separated from one another in that at least the liquid enclosed between the wafers (10, 12), which are bonded to one another, is exposed to a temperature lying substantially above the bonding temperature at which the liquid vaporizes. A wafer structure is also disclosed.

    摘要翻译： 一种用于将至少两个晶片（10,12）例如两个硅晶片（硅片）或硅晶片和玻璃晶片，或半导体晶片和覆盖晶片可释放地接合的方法，通过 使彼此接触的表面至少基本上光滑平滑的晶片接合方法。 在使晶片（10,12）的表面接触之前，将一滴或多滴液体施加到至少一个表面，并且晶片接合方法至少基本上在室温下或在 稍高的温度，或任选地在稍低的温度下。 结合在一起的晶片（10,12）可以容易地彼此分离，因为至少封闭在彼此结合的晶片（10,12）之间的液体暴露于基本上在 液体蒸发的粘合温度。 还公开了一种晶片结构。